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参数资料
| 型号： | ISL6208CR |
| 厂商： | Intersil |
| 文件页数： | 9/13页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8-QFN |
| 标准包装： | 100 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 20ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 33V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VQFN 裸露焊盘 |
| 供应商设备封装： | 8-QFN（3x3） |
| 包装： | 管件 |
ISL6208, ISL6208B
Layout Considerations
Reducing Phase Ring
The parasitic inductances of the PCB and power devices (both upper
and lower FETs) could cause increased PHASE ringing, which may
lead to voltages that exceed the absolute maximum rating of the
devices. When PHASE rings below ground, the negative voltage
could add charge to the bootstrap capacitor through the internal
bootstrap diode. Under worst-case conditions, the added charge
could overstress the BOOT and/or PHASE pins. To prevent this from
happening, the user should perform a careful layout inspection to
reduce trace inductances, and select low lead inductance MOSFETs
and drivers. D 2 PAK and DPAK packaged MOSFETs have high
parasitic lead inductances, as opposed to SOIC-8. If higher
inductance MOSFETs must be used, a Schottky diode is
recommended across the lower MOSFET to clamp negative PHASE
ring.
9
A good layout would help reduce the ringing on the phase and
gate nodes significantly:
? Avoid using vias for decoupling components where possible,
especially in the BOOT-to-PHASE path. Little or no use of vias
for VCC and GND is also recommended. Decoupling loops
should be short.
? All power traces (UGATE, PHASE, LGATE, GND, VCC) should be
short and wide, and avoid using vias. If vias must be used, two
or more vias per layer transition is recommended.
? Keep the SOURCE of the upper FET as close as thermally
possible to the DRAIN of the lower FET.
? Keep the connection in between the SOURCE of lower FET and
power ground wide and short.
? Input capacitors should be placed as close to the DRAIN of the
upper FET and the SOURCE of the lower FET as thermally
possible.
Note: Refer to Intersil Tech Brief TB447 for more information.
Thermal Management
For maximum thermal performance in high current, high
switching frequency applications, connecting the thermal pad of
the QFN and DFN parts to the power ground with multiple vias, or
placing a low noise copper plane underneath the SOIC part is
recommended. This heat spreading allows the part to achieve its
full thermal potential.
FN9115.6
January 31, 2012
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6208CR-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6208CRZ | 功能描述:功率驱动器IC VER OF ISL6208CR IBM FAB RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6208CRZ-T | 功能描述:功率驱动器IC VER OF ISL6208CR-T I BM FAB RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6208IB | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intersil Corporation 功能描述: |
| ISL6208IBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
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