参数资料
型号: ISL6208IRZ
厂商: Intersil
文件页数: 3/13页
文件大小: 0K
描述: IC MOSFET DRVR SYNC BUCK 8-QFN
标准包装: 100
配置: 高端和低端,同步
输入类型: PWM
延迟时间: 20ns
电流 - 峰: 2A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 33V
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 100°C
安装类型: 表面贴装
封装/外壳: 8-VQFN 裸露焊盘
供应商设备封装: 8-QFN(3x3)
包装: 管件
ISL6208, ISL6208B
Absolute Maximum Ratings
ti
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V FCCM , V PWM ) . . . . . . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (V BOOT-GND ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 33V
BOOT To PHASE Voltage (V BOOT-PHASE ). . . . . . . . . . . . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 30V
GND - 8V (<20ns Pulse Width, 10μJ)
UGATE Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . V PHASE - 0.3V (DC) to V BOOT
V PHASE - 5V (<20ns Pulse Width, 10μJ) to V BOOT
LGATE Voltage . . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5μJ) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-40°C to +125°C
Thermal Information
Thermal Resistance (Typical) θ JA (°C/W) θ JC (°C/W)
8 Ld SOIC Package (Notes 5, 8) . . . . . . . . . 110 67
8 Ld 3x3 QFN Package (Notes 6, 7) . . . . . . 80 15
8 Ld 2x2 DFN Package (Notes 6, 7) . . . . . . 89 24
Maximum Storage Temperature Range . . . . . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-10°C to +100°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . . +125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4. The Phase Voltage is capable of withstanding -7V when the BOOT pin is at GND.
5. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379 .
7. For θ JC , the “case temp” location is the center of the exposed metal pad on the package underside.
8. For θ JC , the “case temp” location is taken at the package top center.
Electrical Specifications
temperature range.
Recommended Operating Conditions, Unless Otherwise Noted. Boldface limits apply over the operating
MIN
MAX
PARAMETER
SYMBOL
TEST CONDITIONS
(Note 10)
TYP
(Note 10) UNITS
V CC SUPPLY CURRENT
Bias Supply Current
I VCC
PWM pin floating, V FCCM = 5V
-
80
-
μA
POR
V CC Rising
V CC Falling
Hysteresis
-
2.40
-
3.40
2.90
500
3.90
-
-
V
V
mV
BOOTSTRAP DIODE
Forward Voltage
V F
V VCC = 5V, forward bias current = 2mA
0.50
0.55
0.65
V
PWM INPUT
Input Current
PWM Three-State Rising Threshold
PWM Three-State Falling Threshold
Three-State Shutdown Hold-off Time
I PWM
t TSSHD
V PWM = 5V
V PWM = 0V
V VCC = 5V
V VCC = 5V
V VCC = 5V, temperature = +25°C
-
-
0.70
3.5
100
250
-250
1.00
3.8
175
-
-
1.30
4.1
250
μA
μA
V
V
ns
FCCM INPUT
FCCM LOW Threshold
FCCM HIGH Threshold
0.50
-
-
-
-
2.0
V
V
SWITCHING TIME
UGATE Rise Time (Note 9)
LGATE Rise Time (Note 9)
t RU
t RL
V VCC = 5V, 3nF load
V VCC = 5V, 3nF load
-
-
8.0
8.0
-
-
ns
ns
3
FN9115.6
January 31, 2012
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