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| 型号： | ISL6209CB-T |
| 厂商： | Intersil |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 20ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 33V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
ISL6209
The equation governing the dead-time seen in Figure 4 is
expressed as:
will push the IC beyond the maximum recommended
operating junction temperature of 125°C. The maximum
T DELAY = [ ( 160 × 10
– 15
) × R DELAY ] + 6ns
allowable IC power dissipation for the SO-8 package is
approximately 800mW. When designing the driver into an
application, it is recommended that the following calculation
The equation can be rewritten to solve for R DELAY as
follows:
be performed to ensure safe operation at the desired
frequency for the selected MOSFETs. The power dissipated
R DELAY = --------------------------------------------
( T DELAY – 6ns )
160 × 10 – 15
by the driver is approximated as:
P = f sw ( 1.5V U Q U + V L Q L ) + I VCC V
CC
Internal Bootstrap Diode
This driver features an internal bootstrap Schottky diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit.
The bootstrap capacitor must have a maximum voltage
rating above the maximum battery voltage plus 5V. The
where f sw is the switching frequency of the PWM signal. V U
and V L represent the upper and lower gate rail voltage. Q U
and Q L is the upper and lower gate charge determined by
MOSFET selection and any external capacitance added to
the gate pins. The I VCC V CC product is the quiescent power
of the driver and is typically negligible.
C BOOT ≥ ------------------------
bootstrap capacitor can be chosen from the following
equation:
Q GATE
Δ V BOOT
where Q GATE is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The Δ V BOOT term is
defined as the allowable droop in the rail of the upper drive.
1000
900
800
700
600
500
Q U =100nC
Q L = 200nC
Q U =50nC
Q L = 100nC
Q U = 50nC
Q L = 50nC
Q U = 20nC
Q L = 50nC
As an example, suppose an upper MOSFET has a gate
charge, Q GATE , of 25nC at 5V and also assume the droop in
the drive voltage over a PWM cycle is 200mV. One will find
that a bootstrap capacitance of at least 0.125 μ F is required.
The next larger standard value capacitance is 0.22 μ F. A
good quality ceramic capacitor is recommended.
400
300
200
100
2.0
0
0
200
400
600
800
1000 1200 1400 1600 1800 2000
1.8
1.6
1.4
1.2
1.0
0.8
FREQUENCY (kHz)
FIGURE 6. POWER DISSIPATION vs FREQUENCY
Layout Considerations
Reducing Phase Ring
The parasitic inductances of the PCB and power devices
0.6
0.4
Q GATE = 100nC
(both upper and lower FETs) could cause increased PHASE
ringing, which may lead to voltages that exceed the absolute
20nC
0.2
0.0
0.0 0.1
0.2
0.3
0.4 0.5 0.6
0.7
0.8
0.9
1.0
maximum rating of the devices. When PHASE rings below
ground, the negative voltage could add charge to the
bootstrap capacitor through the internal bootstrap diode.
Δ V BOOT_CAP (V)
FIGURE 5. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
7
Under worst-case conditions, the added charge could
overstress the BOOT and/or PHASE pins. To prevent this
from happening, the user should perform a careful layout
inspection to reduce trace inductances, and select low lead
inductance MOSFETs and drivers. D 2 PAK and DPAK
packaged MOSFETs have high parasitic lead inductances,
as opposed to SOIC-8. If higher inductance MOSFETs must
be used, a Schottky diode is recommended across the lower
MOSFET to clamp negative PHASE ring.
相关PDF资料 |
PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6209CBZ | 功能描述:功率驱动器IC P6 HV SYNCHCT BUCK MSFT W/POR & DELAY RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6209CBZ-T | 功能描述:功率驱动器IC P6 HV SYNCHCT BUCK MSFT W/POR & DELAY RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6209CR | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| ISL6209CR-T | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CRZ | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
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