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参数资料
| 型号： | ISL6520AIB |
| 厂商： | Intersil |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 8-SOIC |
| 标准包装： | 98 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 340kHz |
| 占空比： | 100% |
| 电源电压： | 4.5 V ~ 5.5 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 管件 |
ISL6520A
The response time to a transient is different for the
application of load and the removal of load. The following
equations give the approximate response time interval for
application and removal of a transient load:
losses. The lower switch realizes most of the switching
losses when the converter is sinking current (see the
following equations ). These equations assume linear voltage-
current transitions and do not adequately model power loss
t RISE =
L x I TRAN
V IN - V OUT
t FALL =
L x I TRAN
V OUT
(EQ. 7)
due the reverse-recovery of the upper and lower MOSFET’s
body diode. The gate-charge losses are dissipated by the
ISL6520A and don't heat the MOSFETs. However, large gate-
P UPPER = Io × r DS ( ON ) × D + --- ? Io × V IN × t SW × F S
P LOWER = Io × r DS ( ON ) × ( 1 – D ) + --- ? Io × V IN × t SW × F S
F S is the switching frequency.
where: I TRAN is the transient load current step, t RISE is the
response time to the application of load, and t FALL is the
response time to the removal of load. The worst case
response time can be either at the application or removal of
load. Be sure to check both of these equations at the
minimum and maximum output levels for the worst case
response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic
capacitors for high frequency decoupling and bulk capacitors
to supply the current needed each time Q 1 turns on. Place the
small ceramic capacitors physically close to the MOSFETs
and between the drain of Q 1 and the source of Q 2 .
The important parameters for the bulk input capacitor are the
voltage rating and the RMS current rating. For reliable
operation, select the bulk capacitor with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum
input voltage and a voltage rating of 1.5 times is a
conservative guideline. The RMS current rating requirement
for the input capacitor of a buck regulator is approximately
1/2 the DC load current.
For a through hole design, several electrolytic capacitors may
be needed. For surface mount designs, solid tantalum
charge increases the switching interval, t SW which increases
the MOSFET switching losses. Ensure that both MOSFETs
are within their maximum junction temperature at high ambient
temperature by calculating the temperature rise according to
package thermal-resistance specifications. A separate heatsink
may be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
Losses while Sourcing Current
2 1
2
P LOWER = Io 2 x r DS(ON) x (1 - D)
Losses while Sinking Current
P UPPER = Io 2 x r DS(ON) x D
2 1
2
Where: D is the duty cycle = V OUT / V IN ,
t SW is the combined switch ON and OFF time, and
(EQ. 8)
Given the reduced available gate bias voltage (5V),
logic-level or sub-logic-level transistors should be used for
both N-MOSFETs. Caution should be exercised with devices
exhibiting very low V GS(ON) characteristics. The shoot-
through protection present aboard the ISL6520A may be
circumvented by these MOSFETs if they have large parasitic
impedences and/or capacitances that would inhibit the gate
of the MOSFET from being discharged below it’s threshold
level before the complementary MOSFET is turned on.
capacitors can be used, but caution must be exercised with
regard to the capacitor surge currentrating. These capacitors
+5V
D BOOT
must be capable of handling the surge-current at power-up.
Some capacitor series available from reputable manufacturers
are surge current tested.
VCC
+ V D -
BOOT
+5V
MOSFET Selection/Considerations
The ISL6520A requires 2 N-Channel power MOSFETs. These
should be selected based upon r DS(ON) , gate supply
requirements, and thermal management requirements.
ISL6520A
UGATE
PHASE
C BOOT
Q1
NOTE:
V G-S ≈ V CC -V D
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss components;
conduction loss and switching loss. The conduction losses are
-
+
LGATE
GND
Q2
NOTE:
V G-S ≈ V CC
the largest component of power dissipation for both the upper
and the lower MOSFETs. These losses are distributed between
the two MOSFETs according to duty factor. The switching
losses seen when sourcing current will be different from the
switching losses seen when sinking current. When sourcing
current, the upper MOSFET realizes most of the switching
9
FIGURE 7. UPPER GATE DRIVE BOOTSTRAP
Figure 7 shows the upper gate drive (BOOT pin) supplied by a
bootstrap circuit from V CC . The boot capacitor, C BOOT ,
develops a floating supply voltage referenced to the PHASE
pin. The supply is refreshed to a voltage of V CC less the boot
diode drop (V D ) each time the lower MOSFET, Q 2 , turns on.
FN9016.6
December 10, 2009
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| ISL6520AIB-T | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR) |
| ISL6520AIBZ | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
| ISL6520AIBZS2698 | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
| ISL6520AIBZ-T | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
| ISL6520AIBZ-TS2698 | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
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