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| 型号： | ISL6520BIR |
| 厂商： | Intersil |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 16-QFN |
| 标准包装： | 75 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 340kHz |
| 占空比： | 100% |
| 电源电压： | 4.5 V ~ 5.5 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 包装： | 管件 |
ISL6520B
Output Inductor Selection
The output inductor is selected to meet the output voltage
ripple requirements and minimize the converter ’s response
time to the load transient. The inductor value determines the
converter ’s ripple current and the ripple voltage is a function
of the ripple current. The ripple voltage and current are
approximated by the following equations:
for the input capacitor of a buck regulator is approximately
1/2 the DC load current.
For a through hole design, several electrolytic capacitors may
be needed. For surface mount designs, solid tantalum
capacitors can be used, but caution must be exercised with
regard to the capacitor surge currentrating. These capacitors
must be capable of handling the surge-current at power-up.
Δ I =
V IN - V OUT
Fs x L
x
V OUT
V IN
Δ V OUT = Δ I x ESR
(EQ. 3)
Some capacitor series available from reputable manufacturers
are surge current tested.
Increasing the value of inductance reduces the ripple current
and voltage. However, the large inductance values reduce
the converter ’s response time to a load transient.
MOSFET Selection/Considerations
The ISL6520B requires 2 N-Channel power MOSFETs. These
should be selected based upon r DS(ON) , gate supply
requirements, and thermal management requirements.
One of the parameters limiting the converter ’s response to
a load transient is the time required to change the inductor
current. Given a sufficiently fast control loop design, the
ISL6520B will provide either 0% or 100% duty cycle in
response to a load transient. The response time is the time
required to slew the inductor current from an initial current
value to the transient current level. During this interval the
difference between the inductor current and the transient
current level must be supplied by the output capacitor.
Minimizing the response time can minimize the output
capacitance required.
The response time to a transient is different for the
application of load and the removal of load. The following
equations give the approximate response time interval for
application and removal of a transient load:
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss components;
conduction loss and switching loss. The conduction losses are
the largest component of power dissipation for both the upper
and the lower MOSFETs. These losses are distributed between
the two MOSFETs according to duty factor. The switching
losses seen when sourcing current will be different from the
switching losses seen when sinking current. When sourcing
current, the upper MOSFET realizes most of the switching
losses. The lower switch realizes most of the switching
losses when the converter is sinking current (see the
equations below). These equations assume linear voltage-
current transitions and do not adequately model power loss
due the reverse-recovery of the upper and lower MOSFET’s
t RISE =
L x I TRAN
V IN - V OUT
t FALL =
L x I TRAN
V OUT
(EQ. 4)
body diode. The gate-charge losses are dissipated by the
ISL6520B and don't heat the MOSFETs. However, large gate-
charge increases the switching interval, t SW which increases
P UPPER = Io × r DS ( ON ) × D + --- ? Io × V IN × t SW × F S
P LOWER = Io × r DS ( ON ) × ( 1 – D ) + --- ? Io × V IN × t SW × F S
where: I TRAN is the transient load current step, t RISE is the
response time to the application of load, and t FALL is the
response time to the removal of load. The worst case
response time can be either at the application or removal of
load. Be sure to check both of these equations at the
minimum and maximum output levels for the worst case
response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic
capacitors for high frequency decoupling and bulk capacitors
to supply the current needed each time Q 1 turns on. Place the
small ceramic capacitors physically close to the MOSFETs
and between the drain of Q 1 and the source of Q 2 .
The important parameters for the bulk input capacitor are the
voltage rating and the RMS current rating. For reliable
operation, select the bulk capacitor with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum
input voltage and a voltage rating of 1.5 times is a
conservative guideline. The RMS current rating requirement
7
the MOSFET switching losses. Ensure that both MOSFETs
are within their maximum junction temperature at high ambient
temperature by calculating the temperature rise according to
package thermal-resistance specifications. A separate heatsink
may be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
Losses while Sourcing Current
2 1
2
P LOWER = Io 2 x r DS(ON) x (1 - D)
Losses while Sinking Current
P UPPER = Io 2 x r DS(ON) x D
2 1
2
Where: D is the duty cycle = V OUT / V IN ,
t SW is the combined switch ON and OFF time, and
F S is the switching frequency.
(EQ. 5)
Given the reduced available gate bias voltage (5V),
logic-level or sub-logic-level transistors should be used for
both N-MOSFETs. Caution should be exercised with devices
exhibiting very low V GS(ON) characteristics. The shoot-
FN9083.3
July 23, 2007
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6520BIR-T | 功能描述:IC REG CTRLR BUCK PWM VM 16-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR) |
| ISL6520CB | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR) |
| ISL6520CB-T | 功能描述:电压模式 PWM 控制器 Single Synch Buck RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| ISL6520CBZ | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
| ISL6520CBZ-T | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
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