参数资料
型号: ISL6522IRZ-T
厂商: Intersil
文件页数: 5/15页
文件大小: 0K
描述: IC REG CTRLR BST PWM VM 16-QFN
标准包装: 6,000
PWM 型: 电压模式
输出数: 1
频率 - 最大: 1MHz
占空比: 100%
电源电压: 10.8 V ~ 13.2 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 16-VQFN 裸露焊盘
包装: 带卷 (TR)
ISL6522
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted (Continued)
PARAMETER
Upper Gate Sink
Lower Gate Source
Lower Gate Sink
SYMBOL
R UGATE
I LGATE
R LGATE
TEST CONDITIONS
ISL6522C, I LGATE = 0.3A
ISL6522I, I LGATE = 0.3A
V CC = 12V, V LGATE = 6V
ISL6522C, I LGATE = 0.3A
ISL6522I, I LGATE = 0.3A
MIN
-
-
300
-
-
TYP
5.5
5.5
450
3.5
3.5
MAX
10
7.2
-
6.5
4.5
UNITS
?
?
mA
?
?
PROTECTION
OCSET Current Source
Soft-Start Current
I OCSET
I SS
V OCSET = 4.5VDC
170
-
200
10
230
-
μ A
μ A
Typical Performance Curves
80
R T PULLUP
70
1000
100
TO +12V
60
50
40
C GATE = 3300pF
10
R T PULLDOWN
TO V SS
30
20
10
0
C GATE = 1000pF
C GATE = 10pF
10
100
1000
100
200
300
400
500
600
700
800
900
1000
SWITCHING FREQUENCY (kHz)
FIGURE 1. R T RESISTANCE vs FREQUENCY
Functional Pin Descriptions
RT
SWITCHING FREQUENCY (kHz)
FIGURE 2. BIAS SUPPLY CURRENT vs FREQUENCY
SOIC
and
TSSOP
RT
OCSET
SS
1
2
3
14 VCC
13 PVCC
12 LGATE
This pin provides oscillator switching frequency adjustment.
By placing a resistor (R T ) from this pin to GND, the nominal
200kHz switching frequency is increased according to the
following equation:
5 ? 10
COMP
FB
EN
4
5
6
11 PGND
10 BOOT
9 UGATE
6
Fs ≈ 200kHz + ------------------
R T
(R T to GND)
GND 7
8
PHASE
Conversely, connecting a pull-up resistor (R T ) from this pin
to V CC reduces the switching frequency according to the
following equation:
4 ? 10
QFN
16
15
14
13
7
Fs ≈ 200kHz – ------------------
R T
(R T to 12V)
SS 1
COMP 2
12 PVCC
11 LGATE
FB 3
GND
10 PGND
EN 4
9
BOOT
5
6
5
7
8
FN9030.8
March 10, 2006
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