参数资料
型号: ISL6535IBZ
厂商: Intersil
文件页数: 12/14页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM VM 14-SOIC
标准包装: 500
PWM 型: 电压模式
输出数: 1
频率 - 最大: 1.5MHz
占空比: 100%
电源电压: 10.8 V ~ 13.2 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
包装: 管件
ISL6535
temperature by calculating the temperature rise according to
package thermal-resistance specifications. A separate
heatsink may be necessary depending upon MOSFET
power, package type, ambient temperature and air flow.
Standard-gate MOSFETs are normally recommended for
use with the ISL6535. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFETs absolute gate-to-
source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by
a bootstrap circuit from +12V. The boot capacitor, C BOOT
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of +12V
less the boot diode drop (V D ) when the lower MOSFET, Q 2
Figure 10 shows the upper gate drive supplied by a direct
connection to +12V. This option should only be used in
converter systems where the main input voltage is +5 VDC
or less. The peak upper gate-to-source voltage is
approximately +12V less the input supply. For +5V main
power and +12V DC for the bias, the gate-to-source voltage
of Q 1 is 7V. A logic-level MOSFET is a good choice for Q 1
and a logic-level MOSFET can be used for Q 2 if its absolute
gate-to-source voltage rating exceeds the maximum voltage
applied to PVCC. This method reduces the number of
required external components, but does not provide for
immunity to phase node ringing during turn on and may
result in lower system efficiency.
+12V
+5V OR LESS
turns on. A MOSFET can only be used for Q 1 if the
MOSFETs absolute gate-to-source voltage rating exceeds
ISL6535
BOOT
the maximum voltage applied to +12V. For Q 2 , a logic-level
MOSFET can be used if its absolute gate-to-source voltage
rating also exceeds the maximum voltage applied to +12V.
UGATE
Q1
NOTE:
V G-S ≈ V CC - 5V
+12V
D BOOT
PVCC
+12V
ISL6535
+
-
V D
BOOT
+1.2V TO +12V
-
+
LGATE
PGND
Q2
D2
NOTE:
V G-S ≈ PVCC
UGATE
PHASE
C BOOT
Q1
NOTE:
V G-S ≈ V CC - V D
GND
FIGURE 10. UPPER GATE DRIVE - DIRECT V CC DRIVE OPTION
-
+
PVCC
LGATE
PGND
+12V
Q2
D2
NOTE:
V G-S ≈ PVCC
Schottky Selection
Rectifier D 2 is a clamp that catches the negative inductor
swing during the dead time between turning off the lower
MOSFET and turning on the upper MOSFET. The diode must
be a Schottky type to prevent the lossy parasitic MOSFET
GND
FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION
12
body diode from conducting. It is acceptable to omit the
diode and let the body diode of the lower MOSFET clamp
the negative inductor swing, but efficiency could slightly
decrease as a result. The diode's rated reverse breakdown
voltage must be greater than the maximum input voltage.
FN9255.1
May 5, 2008
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ISL6535IBZ-T 功能描述:IC REG CTRLR BUCK PWM VM 14-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:带卷 (TR)
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ISL6535IRZ-TS2695 制造商:Intersil Corporation 功能描述:STD PART EXCEPT USING PL CODE TB7 - Tape and Reel