参数资料
| 型号： | ISL6537ACRZ |
| 厂商： | Intersil |
| 文件页数： | 15/16页 |
| 文件大小： | 0K |
| 描述： | IC REG/CTRLR ACPI DUAL DDR 28QFN |
| 标准包装： | 50 |
| 应用： | 存储器，DDR/DDR2 稳压器 |
| 电流 - 电源： | 7mA |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-VQFN 裸露焊盘 |
| 供应商设备封装： | 28-QFN（6x6） |
| 包装： | 管件 |
ISL6537A
P UPPER = Io × r DS ( ON ) × D + --- ? Io × V IN × t SW × f s
For a through hole design, several electrolytic capacitors
may be needed. For surface mount designs, solid tantalum
capacitors can be used, but caution must be exercised with
regard to the capacitor surge current rating. These
capacitors must be capable of handling the surge-current at
power-up. Some capacitor series available from reputable
manufacturers are surge current tested.
MOSFET Selection - PWM Buck Converter
The ISL6537A requires 2 N-Channel power MOSFETs for
switching power and a third MOSFET to block backfeed from
V DDQ to the Input in S3 Mode. These should be selected
increases the MOSFET switching losses. Ensure that both
MOSFETs are within their maximum junction temperature at
high ambient temperature by calculating the temperature
rise according to package thermal-resistance specifications.
A separate heatsink may be necessary depending upon
MOSFET power, package type, ambient temperature and air
flow.
Approximate Losses while Sourcing current
2 1
2
P LOWER = Io 2 x r DS(ON) x (1 - D)
based upon r DS(ON) , gate supply requirements, and thermal
management requirements.
Approximate Losses while Sinking current
P UPPER = Io 2 x r DS(ON) x D
(EQ. 10)
P LOWER = Io × r DS ( ON ) × ( 1 – D ) + --- ? Io × V IN × t SW × f s
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss
components; conduction loss and switching loss. The
conduction losses are the largest component of power
dissipation for both the upper and the lower MOSFETs.
These losses are distributed between the two MOSFETs
according to duty factor. The switching losses seen when
sourcing current will be different from the switching losses
seen when sinking current. When sourcing current, the
upper MOSFET realizes most of the switching losses. The
lower switch realizes most of the switching losses when the
converter is sinking current (see the equations below).
These equations assume linear voltage-current transitions
2 1
2
Where: D is the duty cycle = V OUT /V IN ,
t SW is the combined switch ON and OFF time, and
f s is the switching frequency.
MOSFET Selection - LDO
The main criteria for selection of the linear regulator pass
transistor is package selection for efficient removal of heat.
Select a package and heatsink that maintains the junction
temperature below the rating with a maximum expected
ambient temperature.
The power dissipated in the linear regulator is:
and do not adequately model power loss due the reverse-
recovery of the upper and lower MOSFET’s body diode. The
P LINEAR ? I O × ( V IN – V OUT )
(EQ. 11)
gate-charge losses are dissipated in part by the ISL6537A
and do not significantly heat the MOSFETs. However, large
gate-charge increases the switching interval, t SW which
15
where I O is the maximum output current and V OUT is the
nominal output voltage of the linear regulator.
FN9143.5
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| ISL6537ACRZR5160 | 功能描述:IC REG/CTRLR ACPI DUAL DDR 28QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 应用说明:Ultrasound Imaging Systems Application Note 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:37 系列:- 应用:医疗用超声波成像，声纳 电流 - 电源:- 电源电压:2.37 V ~ 6 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:56-WFQFN 裸露焊盘 供应商设备封装:56-TQFN-EP（8x8） 包装:管件 |
| ISL6537ACRZ-T | 功能描述:IC REG/CTLR ACPI DUAL DDR 28QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:50 系列:- 应用:热电冷却器 电流 - 电源:- 电源电压:3 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:28-SOIC（0.173"，4.40mm 宽）裸露焊盘 供应商设备封装:28-TSSOP 裸露焊盘 包装:管件 产品目录页面:1410 (CN2011-ZH PDF) |
| ISL6537ACRZ-TR5160 | 功能描述:IC REG/CTRLR ACPI DUAL DDR 28QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 应用说明:Ultrasound Imaging Systems Application Note 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:37 系列:- 应用:医疗用超声波成像，声纳 电流 - 电源:- 电源电压:2.37 V ~ 6 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:56-WFQFN 裸露焊盘 供应商设备封装:56-TQFN-EP（8x8） 包装:管件 |
| ISL6537CR | 功能描述:IC REG/CTRLR ACPI DUAL DDR 28QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 应用说明:Ultrasound Imaging Systems Application Note 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:37 系列:- 应用:医疗用超声波成像，声纳 电流 - 电源:- 电源电压:2.37 V ~ 6 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:56-WFQFN 裸露焊盘 供应商设备封装:56-TQFN-EP（8x8） 包装:管件 |
| ISL6537CR-T | 功能描述:IC REG/CTRLR ACPI DUAL DDR 28QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 应用说明:Ultrasound Imaging Systems Application Note 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:37 系列:- 应用:医疗用超声波成像，声纳 电流 - 电源:- 电源电压:2.37 V ~ 6 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:56-WFQFN 裸露焊盘 供应商设备封装:56-TQFN-EP（8x8） 包装:管件 |
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