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参数资料
| 型号： | ISL6565BCV |
| 厂商： | Intersil |
| 文件页数： | 20/28页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 28TSSOP |
| 标准包装： | 50 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 1.5MHz |
| 占空比： | 66.7% |
| 电源电压： | 4.75 V ~ 5.25 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | 0°C ~ 105°C |
| 封装/外壳： | 28-TSSOP（0.173"，4.40mm 宽） |
| 包装： | 管件 |
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ISL6565A, ISL6565B
P UP , 1 ≈ V IN ? ------ + --------- ? ? ---- 1 ? f S
the required time for this commutation is t 1 and the
approximated associated power loss is P UP,1 .
I M I PP ? t ?
? N 2 ? ? 2 ?
(EQ. 22)
V IN
CHANNEL N
UPPER MOSFET
I L
At turn on, the upper MOSFET begins to conduct and this
transition occurs over a time t 2 . In Equation 23, the
approximate power loss is P UP,2 .
ISEN(n)
R ISEN
P UP , 2 ≈ V IN ? ------ – --------- ? ? ---- 2 ? f S
L DS ( ON )
? I M I PP ? ? t ?
? N 2 ? ? 2 ?
(EQ. 23)
ISL6565A
-
+
I
r
CHANNEL N
A third component involves the lower MOSFET’s reverse-
recovery charge, Q rr . Since the inductor current has fully
commutated to the upper MOSFET before the lower-
MOSFET’s body diode can recover all of Q rr , it is conducted
through the upper MOSFET across VIN. The power
LOWER MOSFET
FIGURE 15. ISL6565A INTERNAL AND EXTERNAL CURRENT-
SENSING CIRCUITRY
Select values for these resistors based on the room
dissipated as a result is P UP,3 .
P UP , 3 = V IN Q rr f S
(EQ. 24)
temperature r DS(ON) of the lower MOSFETs; the full-load
operating current, I FL ; and the number of phases, N using
Equation 26.
R ISEN = ----------------------- )
I FL
Finally, the resistive part of the upper MOSFETs is given in
Equation 25 as P UP,4 .
r DS ( ON
70 × 10 – 6
--------
N
(EQ. 26)
I PP2
? I M ?
P UP , 4 ≈ r DS ( ON ) ? ------ ? d + ----------
2
? N ? 12
(EQ. 25)
In certain circumstances, it may be necessary to adjust the
value of one or more ISEN resistor. When the components of
one or more channels are inhibited from effectively dissipating
The total power dissipated by the upper MOSFET at full load
can now be approximated as the summation of the results
from Equations 22, 23, 24 and 25. Since the power
equations depend on MOSFET parameters, choosing the
correct MOSFETs can be an iterative process involving
repetitive solutions to the loss equations for different
their heat so that the affected channels run hotter than
desired, choose new, smaller values of R ISEN for the affected
phases (see the section entitled Voltage Regulation ). Choose
R ISEN,2 in proportion to the desired decrease in temperature
rise in order to cause proportionally less current to flow in the
hotter phase.
R ISEN , 2 = R ISEN ---------- 2
MOSFETs and different switching frequencies.
Current Sensing Component Selection
? T
? T 1
(EQ. 27)
The ISL6565A supports MOSFET r DS(ON) current sensing,
while the ISL6565B uses inductor DCR current sensing. The
procedures for choosing the components for each method of
current sensing are very different and are described in the
next two sections.
MOSFET r DS(ON) SENSING (ISL6565A ONLY)
The ISL6565A senses the channel load current by sampling
the voltage across the lower MOSFET r DS(ON) , as shown in
Figure 15. The ISEN pins are denoted ISEN1, ISEN2, and
ISEN3. The resistors connected between these pins and the
respective phase nodes determine the gains in the load-line
regulation loop and the channel-current balance loop as well
as setting the overcurrent trip point.
20
In Equation 27, make sure that ? T 2 is the desired temperature
rise above the ambient temperature, and ? T 1 is the measured
temperature rise above the ambient temperature. While a
single adjustment according to Equation 27 is usually
sufficient, it may occasionally be necessary to adjust R ISEN
two or more times to achieve optimal thermal balance
between all channels.
INDUCTOR DCR SENSING (ISL6565B ONLY)
The ISL6565B senses the channel load current by sampling
the voltage across the output inductor DCR, as described in
the Current Sensing section. As Figure 16 illustrates, an R-C
network across the inductor is required to sense the channel
current accurately.
FN9135.4
December 1, 2005
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| ISL6565BCV-T | 功能描述:IC REG CTRLR BUCK PWM VM 28TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:100% 电源电压:8.2 V ~ 30 V 降压:无 升压:无 回扫:是 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:0°C ~ 70°C 封装/外壳:8-DIP（0.300"，7.62mm） 包装:管件 产品目录页面:1316 (CN2011-ZH PDF) |
| ISL6565BCVZ | 功能描述:IC REG CTRLR BUCK PWM VM 28TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
| ISL6565BCVZ-T | 功能描述:IC REG CTRLR BUCK PWM VM 28TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
| ISL6566ACRZ | 功能描述:IC CTRLR PWM 3PHASE BUCK 40-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
| ISL6566ACRZ-T | 功能描述:IC CTRLR PWM 3PHASE BUCK 40-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:43 系列:- 应用:控制器，Intel VR11 输入电压:5 V ~ 12 V 输出数:1 输出电压:0.5 V ~ 1.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:48-VFQFN 裸露焊盘 供应商设备封装:48-QFN（7x7） 包装:管件 |
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