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参数资料
| 型号： | ISL6605IBZ |
| 厂商： | Intersil |
| 文件页数： | 7/9页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET DUAL SYNC 8SOIC |
| 标准包装： | 98 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 33V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1241 (CN2011-ZH PDF) |
ISL6605
1000
900
800
700
600
500
Q U =100nC
Q L =200nC
Q U =50nC
Q L =100nC
Q U =50nC
Q L =50nC
Q U =20nC
Q L =50nC
voltage should be checked at the worst case (maximum
VCC and prior to overcurrent trip point), especially for
applications with higher than 20A per D 2 PAK FET.
MOSFETs with low parasitic lead inductances, such as
multi-SOURCE leads devices (SO-8 and LFPAK), are
recommended.
Careful layout would help reduce the negative ringing peak
significantly:
400
300
200
100
- Tie the SOURCE of the upper FET and the DRAIN of
the lower FET as close as possible;
- Use the shortest low-impedance trace between the
SOURCE of the lower FET and the power ground;
0
0
200 400 600 800 1000 1200 1400 1600 1800 2000
- Tie the GND of the ISL6605 closely to the SOURCE of
the lower FET.
FREQUENCY (KHZ)
FIGURE 2. POWER DISSIPATION VS. FREQUENCY
Application Information
Fault Mode at Repetitive Startups
At a low VCC (<2V), the Thevenin equivalent of the 20k
PHASE
Negative Spike
divider at the PWM pin, as shown in the Block Diagram on
page 2, is no longer true; very high impedance will be seen
from the PWM pin to GND. Junction leakage currents from
the VCC to the resistor tub will tend to pull up the PWM input
and falsely trigger the UGATE. If the energy stored in the
bootstrap capacitor is not completely discharged during the
previous power-down period, then the upper MOSFET could
be turned on and generate a spike at the output when VCC
ramps up. A 499k Ω resistor at the PWM to GND, as shown
in Figure 3, helps bleed the leakage currents, thus
eliminating the startup spike.
PWM
FIGURE 4. TYPICAL PHASE NODE VOLTAGE WAVEFORM
A resistor placement of R BOOT , as shown in Figure 5, in the
earlier design is recommended; it helps eliminate the
overcharge of the BOOT capacitor, in terms of voltage stress
across the BOOT to PHASE. When needed, 1 to 2 Ohm
R BOOT is sufficient and has little impact on the overall
efficiency. However, a design with good layout and using
MOSFETs with low parasitic lead inductances, such as
multi-SOURCE leads devices (SO-8 and LFPAK), is
generally not required such a resistor.
BOOT
499K
ISL6605
GND
ISL6605
PHASE
R BOOT
C BOOT
FIGURE 5. RESISTOR PLACEMENT FOR THE R BOOT
FIGURE 3. 499k Ω RESISTOR
Layout Considerations and MOSFET Selection
The parasitic inductances of the PCB and the power devices
(both upper and lower FETs) generate a negative ringing at
the trailing edge of the PHASE node. This negative ringing
plus the VCC adds charges to the bootstrap capacitor
through the internal bootstrap schottky diode when the
PHASE node is low. If the negative spikes are too large,
especially at high current applications with a poor layout, the
voltage on the bootstrap capacitor could exceed the VCC
and the device’s maximum rating. The V BOOT-PHASE
7
When placing the QFN part on the board, no vias or trace
should be running in between pin numbers 1 and 8 since a
small piece of copper is underneath the corner for the
orientation. In addition, connecting the thermal pad of the
QFN part to the power ground with a via, or placing a low
noise copper plane underneath the SOIC part is strongly
recommended for high switching frequency, high current
applications. This is for heat spreading and allows the part
to achieve its full thermal potential.
FN9091.7
May 9, 2006
相关PDF资料 |
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| ISL6608IR-T | IC MOSFET DRVR SYNC BUCK 8-QFN |
| ISL6609AIRZ-TK | IC MOSFET DVR SYNC RECT 8-QFN |
| ISL6610IRZ | IC MOSFET DRVR DUAL SYNC 16-QFN |
| ISL6612ACBZ | IC DRIVER MOSFET SYNC BUCK 8SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6605IBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| ISL6605IR | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6605IRR5168 | 制造商:Intersil Corporation 功能描述: |
| ISL6605IR-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6605IRZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
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