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参数资料
| 型号： | ISL6608IB-T |
| 厂商： | Intersil |
| 文件页数： | 6/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 20ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
ISL6608
Description
Theory of Operation
Designed for speed, the ISL6608 dual MOSFET driver controls
both high-side and low-side N-Channel FETs from one
externally provided PWM signal.
A rising edge on PWM initiates the turn-off of the lower
MOSFET (see Figure 1, Timing Diagram). After a short
propagation delay [t PDLL ], the lower gate begins to fall.
Typical fall times [t FL ] are provided in the Electrical
Specifications section. Adaptive shoot-through circuitry
monitors the LGATE voltage. When LGATE has fallen below
1V, UGATE is allowed to turn ON. This prevents both the
lower and upper MOSFETs from conducting simultaneously,
or shoot-through.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
2.5V
propagation delay [t PDLU ] is encountered before the upper
gate begins to fall [t FU ]. The upper MOSFET gate-to-source
voltage is monitored, and the lower gate is allowed to rise
after the upper MOSFET gate-to-source voltage drops below
1V. The lower gate then rises [t RL ], turning on the lower
MOSFET.
This driver is optimized for converters with large step down
compared to the upper MOSFET because the lower
MOSFET conducts for a much longer time in a switching
period. The lower gate driver is therefore sized much larger
to meet this application requirement.
The 0.5 ? on-resistance and 4A sink current capability
enable the lower gate driver to absorb the current injected to
the lower gate through the drain-to-gate capacitor of the
lower MOSFET and prevent a shoot through caused by the
high dv/dt of the phase node.
PWM
t PDHU
t PDLU
t TSSHD
t RU
t FU
t RU
t FU
t PTS
1V
UGATE
LGATE
t FL
1V
t RL
t TSSHD
t PTS
t PDLL
t PDHL
t FL
FIGURE 1. TIMING DIAGRAM
6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6608IBZ | 功能描述:功率驱动器IC VER OF ISL6608IB W/-40TO+100 TEMP RNG RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6608IBZ-T | 功能描述:功率驱动器IC VER OF ISL6608CB-T W/-40 TO +100 TEMP RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6608IR | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6608IR-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6608IRZ | 功能描述:功率驱动器IC VER OF ISL6608IR -40 TO +100 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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