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| 型号： | ISL6608IR-T |
| 厂商： | Intersil |
| 文件页数： | 9/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8-QFN |
| 标准包装： | 6,000 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 20ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VQFN 裸露焊盘 |
| 供应商设备封装： | 8-QFN（3x3） |
| 包装： | 带卷 (TR) |
ISL6608
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction tem perature of 125 ° C. The maximum
allowable IC power dissipation for the SO-8 package is
approximately 800mW. When designing the driver into an
application, it is recommende d that the following calculation
be performed to ensure safe operation at the desired
frequency for the selected MOSFETs. The power dissipated
by the driver is approximated as below and plotted as in
Figure 9.
Layout Consideration
For heat spreading, place copper underneath the IC whether
it has an exposed pad or not. The copper area can be
extended beyond the bottom area of the IC and/or
connected to buried copper plane(s) with thermal vias. This
combination of vias for vertical heat escape, extended
copper plane, and buried planes for heat spreading allows
the IC to achieve its full thermal potential.
Place each channel power component as close to each
other as possible to reduce PCB copper losses and PCB
parasitics: shortest distance between DRAINs of upper FETs
and SOURCEs of lower FETs; shortest distance between
DRAINs of lower FETs and the power ground. Thus, smaller
amplitudes of positive and negative ringing are on the
switching edges of the PHASE node. However, some space
P = f sw ( 1.5V U Q U + V L Q L ) + I DDQ V
CC
in between power components is required for good airflow.
The gate traces from the drivers to the FETs should be kept
short and wide to reduce the inductance of the traces and
where f sw is the switching frequency of the PWM signal. V U
and V L represent the upper and lower gate rail voltage. Q U
and Q L are the upper and lower gate charge determined by
MOSFET s election and any external capacitance added to
the gate pins. The I DDQ V CC product is the quiescent power
of the driver and is typically negligible.
promote clean drive signals.
1000
900
Q U =100nC
Q L =200nC
Q U =50nC
Q L =100nC
Q U =50nC
Q L =50nC
800
700
600
500
400
300
200
100
Q U =20nC
Q L =50nC
0
0
200
400
600 800 1000 1200 1400 1600 1800 2000
FREQUENCY (kHz)
FIGURE 9. POWER DISSIPATION vs FREQUENCY
9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6608IRZ | 功能描述:功率驱动器IC VER OF ISL6608IR -40 TO +100 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6608IRZ-T | 功能描述:功率驱动器IC VER OF ISL6608IR-T -40 TO +100 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6609ACBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6609ACBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6609ACBZ-TS2568 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intersil Corporation 功能描述: |
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