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| 型号： | ISL6610CRZ |
| 厂商： | Intersil |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR DUAL SYNC 16-QFN |
| 标准包装： | 75 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 18ns |
| 配置数： | 2 |
| 输出数： | 4 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN-EP（4x4） |
| 包装： | 管件 |
?
ISL6610, ISL6610A
Data Sheet
November 22, 2006
FN6395.0
Dual Synchronous Rectified MOSFET
Drivers
The ISL6610, ISL6610A integrates two ISL6609, ISL6609A
drivers with enable function removed and is optimized to
drive two independent power channels in a synchronous-
rectified buck converter topology. These drivers, combined
with an Intersil ISL63xx or ISL65xx multiphase PWM
controller, form a complete high efficiency voltage regulator
at high switching frequency.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3nF load with less than
10ns rise/fall time. Bootstrapping of the upper gate driver is
implemented via an internal low forward drop diode,
reducing implementation cost, complexity, and allowing the
use of higher performance, cost effective N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
The ISL6610, ISL6610A features 4A typical sink current for
the lower gate driver, enhancing the lower MOSFET gate
hold-down capability during PHASE node rising edge,
preventing power loss caused by the self turn-on of the lower
MOSFET due to the high dV/dt of the switching node.
The ISL6610, ISL6610A also features an input that
recognizes a high-impedance state, working together with
Intersil multiphase PWM controllers to prevent negative
transients on the controlled output voltage when operation is
suspended. This feature eliminates the need for the schottky
diode that may be utilized in a power system to protect the
Features
? 5V Quad N-Channel MOSFET Drives for Two
Synchronous Rectified Bridges
? Pin-to-pin Compatible with ISL6614 (12V Drive)
? Adaptive Shoot-Through Protection
? 0.4 Ω On-Resistance and 4A Sink Current Capability
? Supports High Switching Frequency
- Fast Output Rise and Fall
- Low Tri-State Hold-Off Time
? BOOT Capacitor Overcharge Prevention (ISL6610A)
? Low V F Internal Bootstrap Diode
? Power-On Reset
? QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline
- Near Chip-Scale Package Footprint; Improves PCB
Utilization, Thinner Profile
? Pb-Free Plus Anneal Available (RoHS Compliant)
Related Literature
? Technical Brief TB389 “PCB Land Pattern Design and
Surface Mount Guidelines for QFN (MLFP) Packages”
? Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Ordering Information
load from negative output voltage damage.
In addition, the ISL6610As bootstrap function is designed to
prevent the BOOT capacitor from overcharging, should
PART
NUMBER
(Note)
ISL6610CBZ
PART
MARKING
6610CBZ
TEMP.
RANGE
(°C)
0 to +70
PACKAGE
(Pb-Free)
14 Ld SOIC
PKG.
DWG. #
M14.15
excessively large negative swings occur at the transitions of
ISL6610CRZ
66 10CRZ
0 to +70
16 Ld 4x4 QFN L16.4x4
the PHASE node.
ISL6610IBZ
6610IBZ
-40 to +85 14 Ld SOIC
M14.15
Applications
ISL6610IRZ
66 10IRZ
-40 to +85 16 Ld 4x4 QFN L16.4x4
? Core Voltage Supplies for Intel? and AMD?
ISL6610ACBZ 6610ACBZ
0 to +70
14 Ld SOIC
M14.15
Microprocessors
ISL6610ACRZ 66 10ACRZ
0 to +70
16 Ld 4x4 QFN L16.4x4
? High Frequency Low Profile High Efficiency DC/DC
ISL6610AIBZ
6610AIBZ
-40 to +85 14 Ld SOIC
M14.15
Converters
ISL6610AIRZ
66 10AIRZ
-40 to +85 16 Ld 4x4 QFN L16.4x4
? High Current Low Voltage DC/DC Converters
? Synchronous Rectification for Isolated Power Supplies
Add “-T” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2006. All Rights Reserved
AMD? is a registered trademark of Advanced Micro Devices, Inc. All other trademarks mentioned are the property of their respective owners.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6610CRZ-T | 功能描述:IC MOSFET DRVR DUAL SYNC 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6610IBZ | 功能描述:IC MOSFET DRVR DUAL SYNC 14-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6610IBZ-T | 功能描述:IC MOSFET DRVR DUAL SYNC 14-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6610IRZ | 功能描述:IC MOSFET DRVR DUAL SYNC 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6610IRZ-T | 功能描述:IC MOSFET DRVR DUAL SYNC 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
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