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参数资料
| 型号： | ISL6612IR-T |
| 厂商： | Intersil |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 10-DFN |
| 标准包装： | 6,000 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 10ns |
| 电流 - 峰： | 1.25A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 10.8 V ~ 13.2 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN（3x3） |
| 包装： | 带卷 (TR) |
ISL6612, ISL6613
is approximately 800mW at room temperature, while the
power dissipation capacity in the EPSOIC and DFN
packages, with an exposed heat escape pad, is more than 2W
and 1.5W, respectively. Both EPSOIC and DFN packages are
UVCC
BOOT
C GD
D
more suitable for high frequency applications. See “Layout
Considerations” on page 9 for thermal transfer improvement
suggestions. When designing the driver into an application, it
is recommended that the following calculation is used to
ensure safe operation at the desired frequency for the
R HI1
R LO1
G
R G1
R GI1
C GS
S
C DS
Q 1
selected MOSFETs. The total gate drive power losses due to
the gate charge of MOSFETs and the driver’s internal circuitry
and their corresponding average driver current can be
estimated using Equation 2 and Equation 3, respectively,
PHASE
FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
P Qg_TOT = P Qg_Q1 + P Qg_Q2 + I Q ? VCC
(EQ. 2)
LVCC
D
Q G1 ? UVCC 2
P Qg_Q1 = --------------------------------------- ? F SW ? N Q1
Q G2
P Qg_Q2 = -------------------------------------- ? F SW ? N Q2
V GS1
? LVCC 2
V GS2
R HI2
R LO2
G
R G2
C GD
R GI2
C GS
C DS
Q 2
? Q G1 ? UVCC ? N Q1 Q G2 ? LVCC ? N Q2 ?
I DR = ? ------------------------------------------------------ + ----------------------------------------------------- ? ? F SW + I Q
P DR_UP = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
R HI1 + R EXT1 R LO1 + R EXT1 ?
?
P DR_LOW = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
? R HI2 + R EXT2 R LO2 + R EXT2 ?
? V GS1 V GS2 ?
(EQ. 3)
where the gate charge (Q G1 and Q G2 ) is defined at a
particular gate to source voltage (V GS1 and V GS2 ) in the
corresponding MOSFET data sheet; I Q is the driver ’s total
quiescent current with no load at both drive outputs; N Q1
and N Q2 are number of upper and lower MOSFETs,
respectively; UVCC and LVCC are the drive voltages for
both upper and lower FETs, respectively. The I Q* VCC
product is the quiescent power of the driver without
capacitive load and is typically 116mW at 300kHz.
The total gate drive power losses are dissipated among the
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
losses, the rest will be dissipated by the external gate
resistors (R G1 and R G2 ) and the internal gate resistors (R GI1
and R GI2 ) of MOSFETs. Figures 3 and 4 show the typical
upper and lower gate drives turn-on transition path. The
power dissipation on the driver can be roughly estimated as:
P DR = P DR_UP + P DR_LOW + I Q ? VCC
? R HI1 R LO1 ? P Qg_Q1
2
? R HI2 R LO2 ? P Qg_Q2
2
S
FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
Layout Considerations
For heat spreading, place copper underneath the IC whether
it has an exposed pad or not. The copper area can be
extended beyond the bottom area of the IC and/or
connected to buried copper plane(s) with thermal vias. This
combination of vias for vertical heat escape, extended
copper plane, and buried planes for heat spreading allows
the IC to achieve its full thermal potential.
Place each channel power component as close to each
other as possible to reduce PCB copper losses and PCB
parasitics: shortest distance between DRAINs of upper FETs
and SOURCEs of lower FETs; shortest distance between
DRAINs of lower FETs and the power ground. Thus, smaller
amplitudes of positive and negative ringing are on the
switching edges of the PHASE node. However, some space
in between the power components is required for good
airflow. The traces from the drivers to the FETs should be
kept short and wide to reduce the inductance of the traces
and to promote clean drive signals.
N
R GI1
R EXT1 = R G1 + -------------
Q1
N
R GI2
R EXT2 = R G2 + -------------
Q2
(EQ. 4)
9
FN9153.9
June 15, 2010
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| ISL6612IRZ | 功能描述:IC MOSFET DRVR SYNC BUCK 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
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| ISL6612IRZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6612IRZ-TR5238 | 功能描述:IC MOSFET DRVR SYNC BUCK 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6613ACB | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
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