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| 型号： | ISL6615ACBZ |
| 厂商： | Intersil |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC HF 6A 8-SOIC |
| 标准包装： | 980 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 10ns |
| 电流 - 峰： | 2.5A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 6.8 V ~ 13.2 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
ISL6615A
Description
PWM
1.18V < PWM < 2.36V
0.76V < PWM < 1.96V
t PDHU
t PDLU
t PDTS
t TSSHD
t PDTS
UGATE
LGATE
t PDLL
t FL
t RU
t RL
t FU
t TSSHD
t PDHL
FIGURE 1. TIMING DIAGRAM
Operation
Designed for versatility and speed, the ISL6615A MOSFET driver
controls both high-side and low-side N-Channel FETs of a half-
bridge power train from one externally provided PWM signal.
Prior to VCC exceeding its POR level, the Pre-POR overvoltage
protection function is activated during initial start-up; the upper
gate (UGATE) is held low and the lower gate (LGATE), controlled
by the Pre-POR overvoltage protection circuits, is connected to
the PHASE. Once the VCC voltage surpasses the VCC Rising
Threshold (see “Electrical Specifications” on page 4) the PWM
signal takes control of gate transitions. A rising edge on PWM
initiates the turn-off of the lower MOSFET (see “TIMING
DIAGRAM” on page 6). After a short propagation delay [t PDLL ],
the lower gate begins to fall. Typical fall times [t FL ] are provided
in the “Electrical Specifications” on page 4. Adaptive shoot-
through circuitry monitors the LGATE voltage and determines the
upper gate delay time [t PDHU ]. This prevents both the lower and
upper MOSFETs from conducting simultaneously. Once this delay
period is complete, the upper gate drive begins to rise [t RU ] and
the upper MOSFET turns on.
A falling transition on PWM results in the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [t PDLU ] is encountered before the upper gate
begins to fall [t FU ]. Again, the adaptive shoot-through circuitry
determines the lower gate delay time, t PDHL . The PHASE voltage
and the UGATE voltage are monitored, and the lower gate is
allowed to rise after PHASE drops below a level or the voltage of
UGATE to PHASE reaches a level depending upon the current
direction (See the following section titled “Advanced Adaptive
Zero Shoot-Through Dead-Time Control” for details). The lower
gate then rises [t RL ], turning on the lower MOSFET.
Advanced Adaptive Zero Shoot-Through
Dead-time Control
The ISL6615A driver incorporates a unique adaptive dead-time
control technique to minimize dead-time, resulting in high
efficiency from the reduced freewheeling time of the lower
MOSFETs’ body-diode conduction, and to prevent the upper and
6
lower MOSFETs from conducting simultaneously. This is
accomplished by ensuring the rising gate turns on its MOSFET
with minimum and sufficient delay after the other has turned off.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it drops below 1.75V. Prior to reaching this level,
there is a 25ns blanking period to protect against sudden dips in
the LGATE voltage. Once 1.75V is reached, the UGATE is released
to rise after 20ns of propagation delay. Once the PHASE is high,
the adaptive shoot-through circuitry monitors the PHASE and
UGATE voltages during PWM falling edge and subsequent UGATE
turn-off. If PHASE falls to less than +0.8V, the LGATE is released
to turn on after 10ns of propagation delay. If the UGATE-PHASE
falls to less than 1.75V and after 40ns of propagation delay,
LGATE is released to rise.
Tri-state PWM Input
A unique feature of these drivers and other Intersil drivers is the
addition of a shutdown window to the PWM input. If the PWM
signal enters and remains within the shutdown window for a set
holdoff time, the driver outputs are disabled and both MOSFET
gates are pulled and held low. The shutdown state is removed
when the PWM signal moves outside the shutdown window.
Otherwise, the PWM rising and falling thresholds outlined in
“Electrical Specifications” on page 4, determine when the lower
and upper gates are enabled.
This feature helps prevent a negative transient on the output
voltage when the output is shut down, eliminating the Schottky
diode that is used in some systems for protecting the load from
reversed output voltage events.
In addition, more than 400mV hysteresis also incorporates into
the Tri-State shutdown window to eliminate PWM input
oscillations due to the capacitive load seen by the PWM input
through the body diode of the controller’s PWM output when the
power-up and/or power-down sequence of bias supplies of the
driver and PWM controller are required.
FN6608.2
April 13, 2012
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相关代理商/技术参数 |
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| ISL6615ACBZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6615ACRZ | 功能描述:IC MOSFET DRVR SYNC HF 6A 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6615ACRZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6615AFRZ | 功能描述:IC MOSFET DRIVER N-CH 10DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6615AFRZ-T | 功能描述:IC MOSFET DRIVER N-CH 10DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
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