参数资料
型号: ISL6615CBZ
厂商: Intersil
文件页数: 4/11页
文件大小: 0K
描述: IC MOSFET DRVR SYNC HF 6A 8-SOIC
标准包装: 980
配置: 高端和低端,同步
输入类型: PWM
延迟时间: 10ns
电流 - 峰: 2.5A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 36V
电源电压: 6.8 V ~ 13.2 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
ISL6615
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Thermal Resistance
θ JA (°C/W)
θ JC (°C/W)
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V BOOT-GND ). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V
Input Voltage (V PWM ) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V
UGATE. . . . . . . . . . . . . . . . . . . V PHASE - 0.3V DC to V BOOT + 0.3V
V PHASE - 3.5V (<100ns Pulse Width, 2μJ) to V BOOT + 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V DC to V PVCC + 0.3V
GND - 5V (<100ns Pulse Width, 2μJ) to V PVCC + 0.3V
PHASE. . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V DC to 15V DC
GND - 8V (<400ns, 20μJ) to 30V (<200ns, V BOOT-GND < 36V))
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . Class I JEDEC STD
SOIC Package (Note 1) . . . . . . . . . . . . 100 N/A
DFN Package (Notes 2, 3) . . . . . . . . . . 48 7
Maximum Junction Temperature (Plastic Package) . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Ambient Temperature Range
ISL6615CRZ, ISL6615CBZ . . . . . . . . . . . . . . . . . . . 0°C to +70°C
ISL6615IRZ, ISL6615IBZ . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . . +125°C
VCC Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 6.8V to 13.2V
PVCC Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . 5V to 12V ±10%
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air.
2. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
3. For θ JC , the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Recommended Operating Conditions; Parameters with MIN and/or MAX limits are 100% tested at +25°C,
unless otherwise specified. Temperature limits established by characterization and are not production
tested.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
Gate Drive Bias Current
I VCC
I PVCC
f PWM = 300kHz, V VCC = 12V
f PWM = 300kHz, V PVCC = 12V
-
-
4.5
8
-
-
mA
mA
POWER-ON RESET AND ENABLE
VCC Rising Threshold
VCC Falling Threshold
6.1
4.7
6.4
5.0
6.7
5.3
V
V
PWM INPUT (See “TIMING DIAGRAM” on page 6)
Input Current
I PWM
V PWM = 3.3V
V PWM = 0V
-
-
365
-350
-
-
μA
μA
PWM Rising Threshold (Note 4)
PWM Falling Threshold (Note 4)
Typical Tri-State Shutdown Window
Tri-State Lower Gate Falling Threshold
Tri-State Lower Gate Rising Threshold
Tri-State Upper Gate Rising Threshold
Tri-State Upper Gate Falling Threshold
Shutdown Holdoff Time
t TSSHD
VCC = 12V
VCC = 12V
VCC = 12V
VCC = 12V
VCC = 12V
VCC = 12V
VCC = 12V
-
-
1.32
-
-
-
-
-
1.70
1.30
-
1.18
0.76
2.36
1.96
65
-
-
1.82
-
-
-
-
-
V
V
V
V
V
V
V
ns
UGATE Rise Time (Note 4)
LGATE Rise Time (Note 4)
UGATE Fall Time (Note 4)
LGATE Fall Time (Note 4)
t RU
t RL
t FU
t FL
V PVCC = 12V, 3nF Load, 10% to 90%
V PVCC = 12V, 3nF Load, 10% to 90%
V PVCC = 12V, 3nF Load, 90% to 10%
V PVCC = 12V, 3nF Load, 90% to 10%
-
-
-
-
13
10
10
10
-
-
-
-
ns
ns
ns
ns
4
FN6481.0
April 24, 2008
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