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参数资料
| 型号： | ISL6620AIRZ |
| 厂商： | Intersil |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | IC SYNC RECT MOSFET DRVR 10-DFN |
| 标准包装： | 100 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 40ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN（3x3） |
| 包装： | 管件 |
| 产品目录页面： | 1248 (CN2011-ZH PDF) |
ISL6620, ISL6620A
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Thermal Resistance
θ JA (°C/W)
θ JC (°C/W)
Input Voltage (V EN , V PWM ) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (V BOOT-GND ). . . -0.3V to 25V (DC) or 36V (<200ns)
BOOT To PHASE Voltage (V BOOT-PHASE ) . . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC)
GND -8V (<20ns Pulse Width, 10μJ) to 30V (<100ns)
UGATE Voltage . . . . . . . . . . . . . . . . V PHASE - 0.3V (DC) to V BOOT
V PHASE - 5V (<20ns Pulse Width, 10μJ) to V BOOT
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5μJ) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . .-40°C to +125°C
SOIC Package (Note 1) . . . . . . . . . . . . 100 N/A
DFN Package (Notes 2, 3) . . . . . . . . . . 48 7
Maximum Junction Temperature (Plastic Package) . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Ambient Temperature Range
ISL6620IBZ, ISL6620IRZ, ISL6620AIBZ, ISL6620AIRZ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
ISL6620CBZ, ISL6620CRZ, ISL6620ACBZ, ISL6620ACRZ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . +125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air.
2. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
3. For θ JC , the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Recommended Operating Conditions; Parameters with MIN and/or MAX limits are 100% tested at +25°C,
unless otherwise specified. Temperature limits established by characterization and are not production
tested.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC Supply Current
No Load Switching Supply Current
Standby Supply Current
IVCC
IVCC
f_PWM = 300kHz, V_VCC = 5V
PWM 0V to 2.5V transition, EN = High
PWM 0V to 2.5V transition, EN = Low
1.27
1.85
1.15
mA
mA
mA
POWER-ON RESET AND ENABLE
VCC Rising POR Threshold
VCC Falling POR Threshold
VCC POR Hysteresis
EN High Threshold
EN Low Threshold
3.2
3.0
130
1.40
1.20
3.8
3.4
300
1.65
1.35
4.4
4.0
530
1.90
1.55
V
V
mV
V
V
PWM INPUT (See TIMING DIAGRAM" on page 6)
Input Current
PWM Rising Threshold (Note 4)
PWM Falling Threshold (Note 4)
Three-State Lower Gate Falling Threshold
Three-State Lower Gate Rising Threshold
Three-State Upper Gate Rising Threshold
Three-state Upper Gate Falling Threshold
UGATE Rise Time (Note 4)
IPWM
t_RU
VPWM = 5V
VPWM = 0V
VCC = 5V
VCC = 5V
VCC = 5V
VCC = 5V
VCC = 5V
VCC = 5V
VCC = 5V, 3nF load, 10% to 90%
500
-430
3.4
1.6
1.6
1.1
3.2
2.8
8
μA
μA
V
V
V
V
V
V
ns
4
FN6494.0
April 25, 2008
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