- 您现在的位置：买卖IC网 > PDF目录17270 > ISL6700IBZ-T (Intersil)IC DRIVER HALF BRIDGE 80V 8-SOIC PDF资料下载
参数资料
| 型号： | ISL6700IBZ-T |
| 厂商： | Intersil |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF BRIDGE 80V 8-SOIC |
| 标准包装： | 1 |
| 配置： | 半桥 |
| 输入类型： | PWM |
| 延迟时间： | 70ns |
| 电流 - 峰： | 1.4A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 80V |
| 电源电压： | 9 V ~ 15 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 1241 (CN2011-ZH PDF) |
| 其它名称： | ISL6700IBZ-TDKR |
ISL6700
Absolute Maximum Ratings
Supply Voltage, V DD (Note 1) . . . . . . . . . . . . . . . . . . . -0.3V to 16V
LI and HI Voltages (Note 1) . . . . . . . . . . . . . . . . -0.3V to V DD +0.3V
Voltage on HS (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 80V
Voltage on HB (Note 1) . . . . . . . . . . . . . . . . V HS -0.3V to V HS +V DD
Voltage on LO (Note 1) . . . . . . . . . . . . . . . . . V SS -0.3 to V DD +0.3V
Voltage on HO (Note 1) . . . . . . . . . . . . . . . . V HS -0.3V to V HB +0.3V
Phase Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V/ns
Maximum Recommended Operating Conditions
Supply Voltage, V DD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 15V
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 75V
Thermal Information
Thermal Resistance (Typical) θ JA (°C/W) θ JC (°C/W)
SOIC (Note 3) . . . . . . . . . . . . . . . . . . . 95 N/A
QFN (Note 4) . . . . . . . . . . . . . . . . . . . . 49 7
Max Power Dissipation at 25°C in Free Air (SOIC, Note 3). 1.316W
Max Power Dissipation at 25°C in Free Air (QFN, Note 4) . .2.976W
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature Range . . . . . . . . .-40°C to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . +300°C
(SOIC - Lead Tips Only)
For Recommended soldering conditions see Tech Brief TB389.
Voltage on HS (Note 2) . . . . . . . . . .(Repetitive Transient) -1V to 80V
Voltage on HB . . . . . . . . . . . . . . . . . . . . . . . . . . V HS +7.5V to V HS +V DD
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
NOTES:
1. All voltages referenced to V SS unless otherwise specified.
2. Based on V DD =15V. The magnitude of the allowable negative transient on the HS pin is a function of the V DD supply voltage. V HS <15.6V-
V DD +V F , where V HS is the magnitude of the allowable negative transient and V F is the forward voltage drop of the bootstrap diode.
3. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. θ JC , the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
V DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, Unless Otherwise Specified
T J = 25°C
T J = -40°C TO
125°C
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
SUPPLY CURRENTS & UNDERVOLTAGE PROTECTION
V DD Quiescent Current
V DD Operating Current
V DD Operating Current
HB Off Quiescent Current
HB On Quiescent Current
HB Operating Current
HB Operating Current
HS Leakage Current
V DD Rising Undervoltage Threshold
V DD Falling Undervoltage Threshold
Undervoltage Hysteresis
HB Undervoltage Threshold
I DD
I DDO
I DDO
I HBL
I HBH
I HBO
I HBO
I HLK
V DDUV+
V DDUV-
UVHYS
VHBUV
LI = 0 or V DD
f = 50kHz
f = 500kHz
HI = 0
HI = V DD
f = 50kHz, C L = 1000pF
f = 500kHz, C L = 1000pF
V HS = 80V
V HB = 96V
Referenced to HS
-
-
-
-
-
-
-
-
6.8
6.5
0.17
4.8
1.9
2.0
2.5
1.25
170
1.45
2.4
-
7.6
7.1
0.45
5.3
2.2
2.2
3.0
1.5
240
1.8
2.8
1
8.25
7.8
0.75
6.5
-
-
-
-
-
-
-
-
6.5
6.25
0.15
4.0
2.4
2.5
4.0
1.8
250
2.0
3.0
1
8.5
8.1
0.90
7.5
mA
mA
mA
mA
μ A
mA
mA
μ A
V
V
V
V
INPUT PINS: LI and HI
Low Level Input Voltage
High Level Input Voltage
Input Voltage Hysteresis
Low Level Input Current
High Level Input Current
V IL
V IH
I IL
I IH
Full Operating Conditions
Full Operating Conditions
V IN = 0V, Full Operating Conditions
V IN = 5V, Full Operating Conditions
0.8
-
-
-70
30
1.6
1.7
100
-60
115
-
2.2
-
-30
130
0.8
-
-
-80
30
-
2.2
-
-30
145
V
V
mV
μ A
μ A
4
FN9077.6
December 29, 2004
相关PDF资料 |
PDF描述 |
|---|---|
| AIAP-02-102-K | INDUCTOR 1000UH 10% .4A |
| TH3E226M035E0500 | CAP TANT 22UF 35V 20% 2917 |
| 591D226X0016C2T15H | CAP TANT 22UF 16V 20% 2812 |
| CBC2518T220K | INDUCTOR 22UH 10% 1007 SMD |
| AIAP-02-331-K | INDUCTOR 330UH 10% .7A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6700IR | 功能描述:功率驱动器IC HALF BRIDGE DUAL RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6700IR-T | 功能描述:IC DRIVER HALF BRIDGE TTL 12-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6700IRZ | 功能描述:IC DRIVER HALF BRIDGE TTL 12-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6700IRZ-T | 功能描述:IC DRIVER HALF BRIDGE TTL 12-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6719ARZ | 功能描述:线性稳压器 - 标准 100V LINEAR BIAS SUPPLY 3X3 RoHS:否 制造商:STMicroelectronics 输出类型: 极性: 输出电压:1.8 V 输出电流:150 mA 负载调节: 最大输入电压:5.5 V 线路调整率: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOT-323-5L |
发布紧急采购，3分钟左右您将得到回复。