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参数资料
| 型号： | ISL6801ABT |
| 厂商： | Intersil |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HISIDE BOOTSTRAP 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端 |
| 输入类型： | 非反相 |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 1 |
| 高端电压 - 最大（自引导启动）： | 120V |
| 电源电压： | 4.5 V ~ 6.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
ISL6801
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V CC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16V
Thermal Resistance (Typical, Note 1)
θ JA ( o C/W)
Driver Output Stage Voltage, V B (Referred to GND) . . . . . . . . .130V
Source Reference Voltage, V S
(-5V for 0.5ms, MOSFET Off). . . . . . . . . . . . . . . . . . . . (Min) -1.5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (Max) 120V
ESD Rating, V ESD
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Maximum Junction Temperature (Plastic Package) . . . . . . . .150 o C
Maximum Storage Temperature Range . . . . . . . . . -55 o C to 150 o C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .245 o C
(SOIC Lead Tips Only)
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . (Min) 820V
(Per MIL-STD-883 Method 3015.7)
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -40 o C to 125 o C
Supply Voltage Range (Max) . . . . . . . . . . . . . . . . . . . . 4.5V to 6.5V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
All values are over full temperature range.
PARAMETER
Operating Temperature Range
Source Reference Voltage
SYMBOL
T A
VS
TEST CONDITIONS
-1.8V Continuous, VB/V OH must stay
MIN
-40
-1.5
TYP
-
-
MAX
125
120
UNITS
o C
V
low, IN = 0V, RES = 5V, V CC = 4.5V and
6.5V, VB = 5V and 12V,
(Load R = 50 ? , C = 6.8nF)
T A = -40 to 125 o C
Supply Voltage (Note 2)
V CC
4.5
-
6.5
V
Driver Output Supply
Switching Frequency
Voltage Transconductance (Note 3)
Peak Gate Drive Current
V VB - VS
V VB - GND
f
dVs/dt
I HOpeak
Ident. to V GS of MOSFET Device
Functional
Guaranteed by Design
Sink/Source Current VB = 5V and 16V,
4.0
2.0
100
-
-
8.5
-
-
-
200
16.0
-
-
500
-
V
V
kHz
V/ μ s
mA
100ns
Continuous Gate Drive Current (Note 3)
Gate Drive Level LOW
Gate Drive Level LOW
Gate Drive Level HIGH
Gate Drive Level HIGH
Total IN to Output Delay (Figure 1)
I HOcont
V HOL, VS
V HOL, VS
V VB, HOH
V VB, HOH
td IN-HOH, L
Sink/Source Current Continuous
IN at H, I HO = 1mA, VB-VS = 5V and 16V
IN at H, I HO = 100mA
IN at L, I HO = 1mA, VB-VS = 5V and 16V
IN at L, I HO = 100mA
at V CC = 5.0V, RES = 5V,
6.5
-
-
-
-
-
8
-
-
-
-
1.0
-
0.3
2.2
0.5
2.2
3.0
mA
V
V
V
V
μ s
Output Trigger Level: 3.5V ON at
VB = 5V, 1.0V OFF at VB = 16V,
Input 2.5V (Load R = 50 ? , C = 6.8nF)
Total RES to Output Delay (Figure 2)
Output Rise/Fall Times
VB Drop Voltage (Figure 4, Note 4)
td RES - HOH, L
t HOH, L
Fall/Rise
VB DROP
VB-VS = 5V and 16V,
(Load R = 50 ? , C = 6.8nF)
VB-VS = 5V
(Load R = 50 ? , C = 6.8nF)
VB-VS = 16V
VB-VS = 9.0V, C 100 = 1 μ F,
(Load R = 50 ? , C = 6.8nF)
-
-
-
-
1.0
100
200
100
3.0
500
500
210
(Note 5)
μ s
ns
ns
mV
3
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