参数资料
型号: ISL80113IRAJZ
厂商: Intersil
文件页数: 1/17页
文件大小: 0K
描述: IC REG LDO ADJ 3A 10-DFN
标准包装: 100
稳压器拓扑结构: 正,可调式
输出电压: 0.8 V ~ 3.3 V
输入电压: 1 V ~ 3.6 V
电压 - 压降(标准): 0.075V @ 3A
稳压器数量: 1
电流 - 输出: 3A(最小值)
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-VFDFN 裸露焊盘
供应商设备封装: 10-DFN(3x3)
包装: 管件
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS
LDOs
ISL80111, ISL80112, ISL80113
The ISL80111, ISL80112, and ISL80113 are ultra low dropout
LDOs providing the optimum balance between performance, size
and power consumption in size constrained designs for data
communication, computing, storage and medical applications.
These LDOs are specified for 1A, 2A and 3A of output current and
are optimized for low voltage conversions.Operating with a V IN of
1V to 3.6V and with a legacy 3.3V to 5V on the BIAS, the V OUT is
adjustable from 0.8V to 3.3V. With a V IN PSRR greater than 40dB
at 100kHz makes these LDOs an ideal choice in noise sensitive
applications. The guaranteed ±1.6% V OUT accuracy overall
conditions lends these parts to suppling an accurate voltage to
the latest low voltage digital ICs.
An enable input allows the part to be placed into a low quiescent
current shutdown mode. A submicron CMOS process is utilized for
this product family to deliver best-in-class analog performance
and overall value for applications in need of input voltage
conversions typically below 2.5V. It also has the superior load
transient regulation unique to a NMOS power stage. These LDOs
Features
? Ultra low dropout: 75mV at 3A, (typ)
? Excellent V IN PSRR: 70dB at 1kHz (typ)
? ±1.6% guaranteed V OUT accuracy for -40oC < T J < +125oC
? Very fast load transient response
? Extensive protection and reporting features
? V IN range: 1V to 3.6V, V OUT range: 0.8V to 3.3V
? Small 10 Ld 3x3 DFN package
Applications
? Noise-sensitive instrumentation and medical systems
? Data acquisition and data communication systems
? Storage, telecommunications and server equipment
? Low voltage DSP, FPGA and ASIC core power supplies
? Post-regulation of switched mode power supplies
consume significantly lower quiescent current as a function of
load compared to bipolar LDOs.
100
ISL80111, ISL80112, ISL80113
90
3A
VIN
VOUT
1.2V ±5%
VIN
C IN
10μF
9
10 VIN
1
VOUT 2
C OUT
10μF
1.0V
VOUT
80
70
60
2A
C BIAS
3.3V ±10%
VBIAS
1μF
EN
OPEN DRAIN COMPATIBLE
4 VBIAS
7 ENABLE
GND
5
PG
ADJ
6
3
R 3
1.0k ?
R 4
1.0k ?
PGOOD
50
40
30
20
10
0
-40
1A
25 85
125
TEMPERATURE (°C)
100
80
FIGURE 1. TYPICAL APPLICATION SCHEMATIC
FIGURE 2. DROPOUT VOLTAGE OVER-TEMP AND I OUT
1.015
1.010
60
I OUT = 2A
I OUT = 1A
I OUT = 0A
1.005
1.000
40
20
0
BIAS = 5V
V IN = 3.3V
V OUT = 2.5V
C OUT = 10μF
100 1k
I OUT = 3A
10k
100k
1M
0.995
0.990
0.985
-40
0
25 85
125
FREQUENCY (Hz)
FIGURE 3. V IN PSRR vs LOAD CURRENT (ISL80113)
TEMPERATURE (°C)
FIGURE 4. Δ V ADJ vs TEMPERATURE
November 1, 2013
FN7841.2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2012, 2013. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
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