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参数资料
| 型号： | ISL89160FRTAZ-T |
| 厂商： | Intersil |
| 文件页数： | 9/14页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 2CH 6A 8TDFN |
| 标准包装： | 6,000 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 25ns |
| 电流 - 峰： | 6A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-TDFN-EP（3x3） |
| 包装： | 带卷 (TR) |
ISL89160, ISL89161, ISL89162
In Figure 16, R del and C del delay the rising edge of the input
signal. For the falling edge of the input signal, the diode shorts
out the resistor resulting in a minimal falling edge delay. If the
diode polarity is reversed, the falling edge is delayed and the
rising delay is minimal.
D
Power Dissipation of the Driver
The power dissipation of the ISL89160, ISL89161, ISL89162 is
dominated by the losses associated with the gate charge of the
driven bridge FETs and the switching frequency. The internal bias
current also contributes to the total dissipation but is usually not
significant as compared to the gate charge losses.
R del
c del
INx
OUTx
12
10
V DS = 64V
FIGURE 16. DELAY USING RCD NETWORK
The 37% and 63% thresholds were chosen to simplify the
calculations for the desired time delays. When using an RC
circuit to generate a time delay, the delay is simply T (secs) = R
(ohms) x C (farads). Please note that this equation only applies if
the input logic voltage amplitude is 3.3V. If the logic high
amplitude is higher than 3.3V, the equations in Equation 1 can
8
6
4
2
V DS = 40V
V H = 5V
V L = 0.1V
be used for more precise delay calculations.
High level of the logic signal into the RC
V THRESH = 63% × 3.3V Positive going threshold
Low level of the logic signal into the RC
0
0 2 4 6 8 10 12 14 16 18 20 22
Q g, GATE CHARGE (nC)
FIGURE 17. MOSFET GATE CHARGE vs GATE VOLTAGE
24
R del = 100 Ω
Timing values
Figure 17 illustrates how the gate charge varies with the gate
t del = – R del C del × LN ? ?
? ?
H
L
C del = 1nF
? V L – V THRESH ?
-------------------------------------------- + 1
V – V
voltage in a typical power MOSFET. In this example, the total gate
charge for V gs = 10V is 21.5nC when V DS = 40V. This is the
charge that a driver must source to turn-on the MOSFET and
t del = 51.731ns
Nominal delay time
(EQ. 1)
must sink to turn-off the MOSFET.
Equation 2 shows calculating the power dissipation of the driver:
P D = 2 ? Q c ? freq ? V GS ? --------------------------------------------- + I DD ( freq ) ? V DD
DS ( ON )
R + r
In this example, the high input logic voltage is 5V, the positive
threshold is 63% of 3.3V and the low level input logic is 0.1V.
Note the rising edge propagation delay of the driver must be
added to this value.
The minimum recommended value of C is 100pF. The parasitic
capacitance of the PCB and any attached scope probes will
introduce significant delay errors if smaller values are used.
Larger values of C will further minimize errors.
Acceptable values of R are primarily effected by the source
resistance of the logic inputs. Generally, 100 ? resistors or larger
are usable. A practical maximum value, limited by contamination
on the PCB, is 1M ?
Paralleling Outputs to Double the Peak Drive
Currents
The typical propagation matching of the ISL89160 and ISL89161
is less than 1ns. The matching is so precise that carefully
matched and calibrated scopes probes and scope channels must
be used to make this measurement. Because of this excellent
performance, these driver outputs can be safely paralleled to
double the current drive capacity. It is important that the INA and
INB inputs be connected together on the PCB with the shortest
possible trace. This is also required of OUTA and OUTB. Note that
the ISL89162 cannot be paralleled because of the
complementary logic.
9
R gate
gate
(EQ. 2)
where:
freq = Switching frequency,
V GS = V DD bias of the ISL89160, ISL89161, ISL89162
Q c = Gate charge for V GS
I DD (freq) = Bias current at the switching frequency (see
Figure 10)
r DS(ON) = ON-resistance of the driver
R gate = External gate resistance (if any).
Note that the gate power dissipation is proportionally shared with
the external gate resistor and the output r DS(ON) . When sizing an
external gate resistor, do not overlook the power dissipated by
this resistor.
FN7719.3
February 20, 2013
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL89160FRTBZ | 功能描述:IC MOSFET DRIVER 2CH 6A 8TDFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89160FRTBZ-T | 功能描述:IC MOSFET DRIVER 2CH 6A 8TDFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89161FBEAZ | 功能描述:IC MOSFET DRIVER 2CH 6A 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL89161FBEAZ-T | 功能描述:IC MOSFET DRIVER 2CH 6A 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89161FBEBZ | 功能描述:IC MOSFET DRIVER 2CH 6A 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
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