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参数资料
| 型号： | ISL89412IBZ |
| 厂商： | Intersil |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | IC DRVR MOSFET DUAL-CH 8-SOIC |
| 标准包装： | 97 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 18ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
ISL89410, ISL89411, ISL89412
.subckt comp1 out inp inm vss
e1 out vss table { (v(inp) v(inm))* 5000} (0,0) (3.2,3.2)
Rout out vss 10meg
V+
Rinp inp vss 10meg
Rinm inm vss 10meg
.ends comp1
Application Guidelines
It is important to minimize inductance to the power FET by
keeping the output drive current loop as short as possible.
Also, the decoupling capacitor, Cq, should be a high quality
ceramic capacitor with a Q that should be a least 10x the
gate Q of the power FET. A ground plane under this circuit is
C q
GND
PARASITIC LEAD
INDUCTANCE
also recommended.
C q
V+
C q SHOULD BE AS CLOSE AS
POSSIBLE TO THE V+ AND
GND PINS
LOOP AS
FIGURE 15. SUGGESTED CONFIGURATION FOR DRIVING
INDUCTIVE LOADS
Where high supply voltage operation is required (15V to
18V), input signals with a minimum of 3.3V input drive is
suggested and a minimum rise/fall time of 100ns. This is
recommended to minimize the internal bias current power
dissipation.
Excessive power dissipation in the driver can result when
driving highly capacitive FET gates at high frequencies.
These gate power losses are defined by Equation 1:
SHORT AS
POSSIBLE
GND
FIGURE 14. RECOMMENDED LAYOUT METHODS
P = 2 ? Q C ? V gs ? f SW
where:
P = Power
Q c = Charge of the Power FET at V gs
(EQ. 1)
In applications where it is difficult to place the driver very
close to the power FET (which may result with excessive
parasitic inductance), it then may be necessary to add an
external gate resistor to dampen the inductive ring. If this
resistor must be too large in value to be effective, then as an
alternative, Schottky diodes can be added to clamp the ring
voltage to V+ or GND.
8
V gs = Gate drive voltage (V+)
f SW = switching Frequency
Adding a gate resistor to the output of the driver will transfer
some of the driver dissipation to the resistor. Another
possible solution is to lower the gate driver voltage which
also lowers Q c .
FN6798.1
July 1, 2009
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL89412IBZ-T13 | 功能描述:IC DRVR MOSFET DUAL-CH 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| ISL89412IP | 功能描述:IC DRVR MOSFET DUAL-CH 8-PDIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL89412IPZ | 功能描述:IC DVR MOSFET DUAL-CH 8-PDIP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL9000 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Dual LDO with Low Noise, Very High PSRR, and Low IQ |
| ISL9000_06 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Dual LDO with Low Noise, Very High PSRR, and Low IQ |
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