参数资料
型号: ISL9005AIRJZ-T
厂商: Intersil
文件页数: 8/9页
文件大小: 0K
描述: IC REG LDO 2.8V .3A 8-DFN
标准包装: 6,000
稳压器拓扑结构: 正,固定式
输出电压: 2.8V
输入电压: 最高 6.5V
电压 - 压降(标准): 0.25V @ 300mA
稳压器数量: 1
电流 - 输出: 300mA(最小)
电流 - 限制(最小): 350mA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-VFDFN 裸露焊盘
供应商设备封装: 8-DFN(2x3)
包装: 带卷 (TR)
ISL9005A
Block Diagram
VIN
During operation, whenever the VIN voltage drops below
about 1.84V, the ISL9005A immediately disables the LDO
output. When VIN rises back above 2.1V, the device
re-initiates its start-up sequence and LDO operation will
resume automatically.
EN
UVLO
CONTROL
LOGIC
SHORT CIRCUIT,
THERMAL PROTECTION,
SOFT-START
+
-
GND
VO
Reference Generation
The reference generation circuitry includes a trimmed
bandgap, a trimmed voltage reference divider, a trimmed
current reference generator, and an RC noise filter.
The bandgap generates a zero temperature coefficient (TC)
voltage for the reference divider. The reference divider
provides the regulation reference and other voltage
references required for current generation and
over-temperature detection.
The current generator outputs references required for
adaptive biasing as well as references for LDO output
current limit and thermal shutdown determination.
LDO Regulation and Programmable Output Divider
BANDGAP AND
TEMPERATURE
SENSOR
VOLTAGE AND
REFERENCE
GENERATOR
1.0V
0.94V
0.9V
The LDO Regulator is implemented with a high-gain
operational amplifier driving a PMOS pass transistor. The
design of the ISL9005A provides a regulator that has low
quiescent current, fast transient response, and overall
GND
Functional Description
The ISL9005A contains all circuitry required to implement a
high performance LDO. High performance is achieved
through a circuit that delivers fast transient response to
varying load conditions. In a quiescent condition, the
ISL9005A adjusts its biasing to achieve the lowest standby
current consumption.
The device also integrates current limit protection, smart
thermal shutdown protection, and soft-start. Smart thermal
stability across all operating and load current conditions.
LDO stability is guaranteed for a 1μF to 10μF output
capacitor that has a tolerance better than 20% and ESR less
than 200m Ω , and the design is performance-optimized for a
1μF output capacitor. Unless limited by the application, use
of an output capacitor value above 4.7μF is not
recommended as LDO performance improvement is
minimal.
Soft-start circuitry integrated into each LDO limits the initial
ramp-up rate to about 30μs/V to minimize current surge. The
ISL9005A provides short-circuit protection by limiting the
output current to about 425mA.
shutdown protects the device against overheating.
The LDO uses an independently trimmed 1V reference as its
Power Control
The ISL9005A has an enable pin (EN) to control power to
the LDO output. When EN is low, the device is in shutdown
mode. During this condition, all on-chip circuits are off, and
the device draws minimum current, typically less than 0.1μA.
When the enable pin is asserted, the device first monitors
the output of the UVLO detector to ensure that VIN voltage is
at least about 2.1V. Once verified, the device initiates a
start-up sequence. During the start-up sequence, trim
settings are first read and latched. Then, sequentially, the
bandgap, reference voltage and current generation circuitry
power-up. Once the references are stable, a fast-start circuit
powers up the LDO.
8
input. An internal resistor divider drops the LDO output
voltage down to 1V. This is compared to the 1V reference for
regulation. The resistor division ratio is programmed in the
factory.
Overheat Detection
The bandgap outputs a proportional-to-temperature current
that is indicative of the temperature of the silicon. This
current is compared with references to determine if the
device is in danger of damage due to overheating. When the
die temperature reaches about +140°C, if the LDO is
sourcing more than 50mA it shuts down until the die cools
sufficiently. Once the die temperature falls back below about
+110°C, the disabled LDO is re-enabled and soft-start
automatically takes place.
FN6452.1
March 27, 2008
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