参数资料
型号: ISL9305IRTHWCLBZ-T
厂商: Intersil
文件页数: 6/17页
文件大小: 661K
描述: IC REG QD BUCK/LINEAR 16TQFN
产品培训模块: Patient Monitoring and Diagnostic Equipment Solutions
标准包装: 6,000
拓扑: 降压(降压)(2),线性(LDO)(2)
功能: 任何功能
输出数: 4
频率 - 开关: 3MHz
电压/电流 - 输出 1: 0.8 V ~ 5.5 V,800mA
电压/电流 - 输出 2: 0.8 V ~ 5.5 V,800mA
电压/电流 - 输出 3: 0.9 V ~ 3.3 V,350mA
带 LED 驱动器:
带监控器:
带序列发生器:
电源电压: 1.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-WQFN 裸露焊盘
供应商设备封装: 16-TQFN-EP(4x4)
包装: 带卷 (TR)
ISL9305H
6
FN7724.1
October 5, 2011
Line Regulation
V
IN
 = V
O
 + 0.5V to 5.5V (minimal 2.5V)
-   0.1   -   %/V
Maximum Output Current
1500   -    -    mA
P-Channel MOSFET ON-resistance
V
IN
 = 3.6V, I
O
 = 200mA
-   0.14  0.20   &
V
IN
 = 2.3V, I
O
 = 200mA
-   0.24  0.40   &
N-Channel MOSFET ON-resistance
V
IN
 = 3.6V, I
O
 = 200mA
-   0.11  0.20   &
V
IN
 = 2.3V, I
O
 = 200mA
0.18  0.34   &
P-Channel MOSFET Peak Current Limit    I
PK
2.1   2.5  2.75   A
SW Maximum Duty Cycle
-   100   -    %
SW Leakage Current
V
IN
 = 5.5V
-   0.005   1    礎
PWM Switching Frequency
f
S
2.6   3.0   3.4   MHz
SW Minimum ON-time
V
FB
 = 0.75V
-    70    -    ns
Bleeding Resistor
-   115   -    &
PG
Output Low Voltage
Sinking 1mA, FB1 = FB2 = 0.7V
-    -   0.25   V
Rising Delay Time
Based on 1ms programmed nominal delay time
0.6   1.1   1.8   ms
Falling Delay Time
Based on 1ms programmed nominal delay time
-    30    -    祍
PG Pin Leakage Current
PG = VINDCD1 = VINDCD2 = 3.6V
-   0.005  0.1   礎
PG Low Rising Threshold
Percentage of nominal regulation voltage
-    91    -    %
PG Low Falling Threshold
Percentage of nominal regulation voltage
-    87    -    %
PG High Rising Threshold
Percentage of nominal regulation voltage
-   112   -    %
PG High Falling Threshold
Percentage of nominal regulation voltage
-   109   -    %
LDO1 AND LDO2
VINLDO1, VINLDO2 Supply Voltage
No higher than VINDCD1
1.5   -   5.5   V
VINLDO1, VINLDO2 Undervoltage
Lockout Threshold
V
UVLO
Rising
-   1.41  1.46   V
Falling
1.33  1.37   -    V
Internal Peak Current Limit
350  425  540   mA
Dropout Voltage
I
O
 = 300mA, V
O
 d 2.1V
-   120  250   mV
I
O
 = 300mA, 2.1V < V
O
 d 2.8V
-   100  200   mV
I
O
 = 300mA, V
O
 > 2.8V
-    80   170   mV
Power Supply Rejection Ratio
I
O
 = 300mA @ 1kHz, V
IN
 = 3.6V, V
O
 = 2.6V, T
A
=+25癈    -    55    -    dB
Output Voltage Noise
V
IN
= 4.2V, I
O
 = 10mA, T
A
=+25癈, BW = 10Hz to 100kHz   -    45    -   礦
RMS
NOTE:
6. Parameters with MIN and/or MAX limits are 100% tested at +25癈, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
Electrical Specifications  Unless otherwise noted, all parameter limits are guaranteed over the recommended operating conditions 
and the typical specifications are measured at the following conditions: T
A
 = +25癈, VINDCD1 = 3.6V, VINDCD2 = 3.3V. For LDO1 and LDO2,
VINLDOx= VOLDOx + 0.5V to 5.5V with VINLDOx always no higher than VINDCD1, L1=L2 = 1.5礖, C1 = 10礔, C4 = C5 = 10礔, C2 = C3 = C6 = C7 =
1礔, I
OUT
=0A for DCD1, DCD2, LDO1 and LDO2 (seeTYPICAL APPLICATION DIAGRAM on page1 for more details). Boldface limits apply over the
operating temperature range, -40癈 to +85癈. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
(Note 6) TYP
MAX
(Note 6) UNIT
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