参数资料
型号: ISL9R1560S3ST
厂商: Fairchild Semiconductor
文件页数: 3/10页
文件大小: 608K
描述: DIODE STEALTH 600V 15A TO-263AB
标准包装: 1
系列: Stealth™
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 15A
电压 - 在 If 时为正向 (Vf)(最大): 2.2V @ 15A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 40ns
电流 - 在 Vr 时反向漏电: 100µA @ 600V
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263-2
包装: 标准包装
其它名称: ISL9R1560S3STDKR
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
STEALTH? Diode
Package Marking and Ordering Information
Electrical Characteristics TC
= 25
°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
PD
Power Dissipation
150
W
EAVL
Avalanche Energy (1
A,
40
mH)
20
mJ
TJ, TSTG
Operating and Storage Temperature Range
-55 to 175
°C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings”
may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Symbol
Parameter
Test Conditions
Min Typ Max
Unit
IR
Instantaneous Reverse Current
VR
= 600
V
TC
= 25
°C - - 100
μA
TC
= 125
°C--1.0mA
VF
Instantaneous Forward Voltage
IF = 15
A
TC
= 25
°C-1.82.2V
TC
= 125
°C - 1.65 2.0 V
CJ
Junction Capacitance
VR = 10
V,
I
F
= 0
A
- 62 - pF
trr
Reverse Recovery Time
IF
= 1
A,
d
iF/dt
=
100
A/μR
= 30
V
- 25 30 ns
s,
V
IF=15
A,
d
iF/dt
=
100
A/μR
= 30
V
- 35 40 ns
s,
V
trr
Reverse Recovery Time
IF
= 15
A,
- 29.4 - ns
diF/dt
= 200
A/μ- 3.5 - A
s,
VR
= 390
V,
T
C
= 25°C
- 57 - nC
Irr
Reverse Recovery
C
urrent
Qrr
Reverse Recovered Charge
trr
Reverse Recovery Time
IF
= 15
A,
-90-ns
)-diF/dt
= 200
A/μ2.0-s,
C
urrent
VR
= 390
V,
- 5.0 - A
TC
= 125°C
S Softness Factor (tb/ta
Reverse Recovery
Reverse Recovered Charge
- 275 - nC
trr
Reverse Recovery Time
IF
= 15
A,
-52-ns
diF/dt
= 800
A/μ- 1.36 -
s,
VR
= 390
V,
- 13.5 - A
TC
= 125°C
S Softness Factor (tb/ta)
Reverse Recovery
C
urrent
Reverse Recovered Charge
- 390 - nC
diM/dt
Maximum di/dt during tb
- 800 - A/μs
RθJC
Thermal Resistance Junction to Case
- - 1.0
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-247
- - 30
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-220
- - 62
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-262
- - 62
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-263
- - 62
°C/W
Symbol
Parameter
Ratings
Unit
Irr
Qrr
Irr
Qrr
?2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
www.fairchildsemi.com
2
Part Number Top Mark
Package
Packing Method Reel Size Tape Width Quantity
ISL9R1560G2
ISL9R1560G2
TO-247-2L
Tube
N/A
N/A
30
ISL9R1560P2
ISL9R1560P2
TO-220AC-2L
Tube
N/A
N/A
50
ISL9R1560S2
ISL9R1560S2
TO-262(I2-PAK)
Tube
N/A
N/A
50
ISL9R1560S3ST
ISL9R1560S3S
TO-263(D2-PAK)
Reel
13" dia
24mm
800
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