参数资料
型号: ISL9R860P2
厂商: Fairchild Semiconductor
文件页数: 1/8页
文件大小: 1573K
描述: DIODE STEALTH 600V 8A TO-220AC
标准包装: 400
系列: Stealth™
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 8A
电压 - 在 If 时为正向 (Vf)(最大): 2.4V @ 8A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 30ns
电流 - 在 Vr 时反向漏电: 100µA @ 600V
安装类型: 通孔
封装/外壳: TO-220-2
供应商设备封装: TO-220AC
包装: 管件
产品目录页面: 1611 (CN2011-ZH PDF)
ISL9R860P2,
ISL9R860S3ST
STEALTH? Diode
ISL9R860P2, ISL9R860S3ST
Features
Applications
?
SMPS
FWD
?
Hard Switched PFC Boost Diode
?
UPS Free
Whe
eling
Diod
e
?
Motor Drive FWD
?
Snubber Diode
Device Maximum Ratings
TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Unit
VRRM
Peak Repetitive Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current (TC
= 147
oC)
8
A
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
16
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
100
A
PD
Power Dissipation
85
W
EAVL
Avalanche Energy
(1
A,
40
mH)
20
mJ
TJ, TSTG
Operating and Storage Temperature Range
-55 to 175 °C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC TO-263AB(D2-PAK)
JEDEC
T
O-220AC-2L
CATHODE
(FLANGE)
ANODE
N/C
Package
Symbol
November 2013
?
Stealth Recovery trr
= 28 ns (@ I
F
= 8 A)
? Max Forward Voltage, VF
= 2.4 V (@ T
C
= 25°C)
?
600
V Reverse Voltage and High Reliability
? Avalanche Energy Rated
? RoHS Compliant
8
A, 600
V, STEALTH? Diode
The ISL9R860P2, ISL9R860S3ST
is
a STEALTH? diode
optimized for low loss performance in high frequency
hard
switched applications. The STEALTH? family exhibits low
reverse recovery current (IRR) and exceptionally soft recovery
under typical operating conditions. This device is intended for
use as a free wheeling or boost diode in power supplies and
other power switching applications. The low IRR
and short ta
phase reduce loss in switching transistors. The soft recovery
minimizes
ringing, expanding the range of conditions under
which the diode maybe operated without the use of additional
snubber circuitry. Consider using the STEALTH?diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
?2001
Fairchild
Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST
Rev.
C1
www.fairchildsemi.com
1
Description
相关PDF资料
PDF描述
MSR860G DIODE STD REC 8A 600V TO220AC
P51-2000-A-M-I36-20MA-000-000 SENSOR 2000PSI M10-1.0 6G 4-20MA
P51-75-A-AD-MD-20MA-000-000 SENSOR 75PSI 7/16-20 UNF 4-20MA
P51-100-S-O-P-4.5V-000-000 SENSOR 100PSI 7/16-20UNF 2B 4.5V
P51-2000-S-M-P-4.5V-000-000 SENSOR 2000PSI M10-1.0 6G 4.5V
相关代理商/技术参数
参数描述
ISL9R860P2 制造商:Fairchild Semiconductor Corporation 功能描述:FAST RECOVERY POWER DIODE
ISL9R860P2_Q 功能描述:整流器 8a 600V Stealth Single RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R860PF2 功能描述:整流器 8A 600V Stealth RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R860S2 功能描述:整流器 8A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R860S3ST 功能描述:整流器 8A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel