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参数资料
| 型号： | ISL9R860S2 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 8A, 600V Stealth⑩ Diode |
| 中文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | TO-262, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 129K |
| 代理商： | ISL9R860S2 |
2004 Fairchild Semiconductor Corporation
May 2004
I
ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
8A, 600V Stealth Diode
General Description
The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are
Stealth diodes optimized for low loss performance in
high frequency hard switched applications. The
Stealth family exhibits low reverse recovery current
(I
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
and short t
phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
Features
Soft Recovery . . . . . . . . . . . . . . . . . . .t
b
/ t
a
> 2.5
Fast Recovery . . . . . . . . . . . . . . . . . . . . t
rr
< 25ns
Operating Temperature . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
Avalanche Energy Rated
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Ratings
600
600
600
8
16
100
85
20
-55 to 175
Units
V
V
V
A
A
A
W
mJ
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 147
o
C)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
°C
°C
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC STYLE TO-262
JEDEC TO-220AC
CATHODE
(FLANGE)
ANODE
N/C
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC TO-263AB
Package
Symbol
相关PDF资料 |
PDF描述 |
|---|---|
| ISL9R860S3S | 8A, 600V Stealth⑩ Diode |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL9R860S3ST | 功能描述:整流器 8A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| ISL9R860S3ST_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| ISL9R860S3ST_Q | 功能描述:整流器 8A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| ISL9R860W2 | 功能描述:二极管 - 通用，功率，开关 WFR 600V 8A HFST ULTRASOFT PWR RECT RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| ISL9V2020D3ST | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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