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参数资料
| 型号： | ISL9V5036S3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH IGNTN 360V 46A TO262AA |
| 产品变化通告： | Product Obsolescence 13/Aug/2010 |
| 产品目录绘图： | IGBT TO-262AA |
| 标准包装： | 50 |
| 系列： | EcoSPARK™ |
| 电压 - 集电极发射极击穿（最大）： | 390V |
| Vge, Ic时的最大Vce（开）： | 1.6V @ 4V，10A |
| 电流 - 集电极 (Ic)（最大）： | 46A |
| 功率 - 最大： | 250W |
| 输入类型： | 逻辑 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262AA |
| 包装： | 管件 |
| 其它名称： | ISL9V5036S3_NL ISL9V5036S3_NL-ND |
Package Marking and Ordering Information
Device Marking
V5036S
V5036P
V5036S
V5036S
Device
ISL9V5036S3ST
ISL9V5036P3
ISL9V5036S3
ISL9V5036S3S
Package
TO-263AB
TO-220AA
TO-262AA
TO-263AB
Reel Size
330mm
Tube
Tube
Tube
Tape Width
24mm
N/A
N/A
N/A
Quantity
800
50
50
50
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV CER
Collector to Emitter Breakdown Voltage
I C = 2mA, V GE = 0,
R G = 1K ?, See Fig. 15
330
360
390
V
T J = -40 to 150°C
BV CES
Collector to Emitter Breakdown Voltage
I C = 10mA, V GE = 0,
R G = 0 , See Fig. 15
360
390
420
V
T J = -40 to 150°C
BV ECS
Emitter to Collector Breakdown Voltage
I C = -75mA, V GE = 0V,
30
-
-
V
T C = 25°C
BV GES
Gate to Emitter Breakdown Voltage
I GES = ± 2mA
±12
±14
-
V
I CER
Collector to Emitter Leakage Current
V CER = 250V,
R G = 1K ?,
See Fig. 11
T C = 25°C
T C = 150°C
-
-
-
-
25
1
μA
mA
I ECS
R 1
R 2
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
V EC = 24V, See T C = 25°C
Fig. 11
T C = 150°C
-
-
-
10K
-
-
75
-
1
40
-
30K
mA
mA
?
?
On State Characteristics
V CE(SAT)
Collector to Emitter Saturation Voltage
I C = 10A,
T C = 25°C,
-
1.17
1.60
V
V GE = 4.0V
See Fig. 4
V CE(SAT)
Collector to Emitter Saturation Voltage
I C = 15A,
T C = 150°C
-
1.50
1.80
V
V GE = 4.5V
Dynamic Characteristics
Q G(ON)
Gate Charge
I C = 10A, V CE = 12V,
-
32
-
nC
V GE = 5V, See Fig. 14
V GE(TH)
V GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
I C = 1.0mA,
V CE = V GE,
See Fig. 10
I C = 10A,
T C = 25°C
T C = 150°C
V CE = 12V
1.3
0.75
-
-
-
3.0
2.2
1.8
-
V
V
V
Switching Characteristics
t d(ON)R
t rR
t d(OFF)L
t fL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
V CE = 14V, R L = 1 ?,
V GE = 5V, R G = 1K ?
T J = 25°C, See Fig. 12
V CE = 300V, L = 2mH ,
V GE = 5V, R G = 1K ?
T J = 25°C, See Fig. 12
T J = 25°C, L = 670 μ H,
R G = 1K ?, V GE = 5V, See
-
-
-
-
-
0.7
2.1
10.8
2.8
-
4
7
15
15
500
μs
μs
μs
μs
mJ
Fig. 1 & 2
Thermal Characteristics
R θ JC
Thermal Resistance Junction-Case
TO-263, TO-220, TO-262
-
-
0.6
°C/W
?2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
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相关代理商/技术参数 |
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| ISL9V5036S3_Q | 功能描述:马达/运动/点火控制器和驱动器 Sgl N-Ch 360V RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| ISL9V5036S3_SB82027C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| ISL9V5036S3S | 功能描述:马达/运动/点火控制器和驱动器 Sgl N-Ch 360V RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| ISL9V5036S3S_Q | 功能描述:马达/运动/点火控制器和驱动器 Sgl N-Ch 360V RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| ISL9V5036S3ST | 功能描述:马达/运动/点火控制器和驱动器 31a 360V IGBT LL avalanche RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
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