参数资料
型号: ISL9V5036S3ST
厂商: Fairchild Semiconductor
文件页数: 5/8页
文件大小: 0K
描述: IGBT N-CH IGNTN 360V 46A TO263AB
产品变化通告: Product Obsolescence 13/Aug/2010
产品目录绘图: IGBT TO-263AB Pkg
标准包装: 1
系列: EcoSPARK™
电压 - 集电极发射极击穿(最大): 390V
Vge, Ic时的最大Vce(开): 1.6V @ 4V,10A
电流 - 集电极 (Ic)(最大): 46A
功率 - 最大: 250W
输入类型: 逻辑
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 标准包装
其它名称: ISL9V5036S3STDKR
Typical Characteristics (Continued)
3000
2500
FREQUENCY = 1 MHz
8
7
I G(REF) = 1mA, R L = 0.6 ?, T J = 25°C
6
2000
1500
1000
C IES
5
4
3
V CE = 12V
C RES
2
500
0
C OES
1
V CE = 6V
0
5
10
15
20
25
0
0
10
20
30
40
50
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs Collector to Emitter
Voltage
360
I CER = 10mA
358
356
354
T J = 175°C
Q G , GATE CHARGE (nC)
Figure 14. Gate Charge
T J = - 40°C
352
350
348
346
344
342
T J = 25°C
340
10
100
1000
2000
3000
R G , SERIES GATE RESISTANCE (k ? )
Figure 15. Breakdown Voltage vs Series Gate Resistance
10 0
10 -1
0.5
0.2
0.1
0.05
0.02
t 1
10 -2
0.01
P D
t 2
10 -3
SINGLE PULSE
DUTY FACTOR, D = t 1 / t 2
PEAK T J = (P D X Z θ JC X R θ JC ) + T C
10 -4
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
T 1 , RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
?2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
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