参数资料
型号: ISP847GB-SMT&R
厂商: ISOCOM COMPONENTS LTD
元件分类: 光电耦合器
英文描述: 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封装: SURFACE MOUNT, PLASTIC, DIP-16
文件页数: 2/3页
文件大小: 103K
代理商: ISP847GB-SMT&R
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (V
F)
1.2
1.4
V
I
F = 20mA
Reverse Voltage (V
R)
6
V
I
R = 10A
Reverse Current (I
R)
10
A
V
R = 6V
Output
Collector-emitter Breakdown (BV
CEO)
35
V
I
C = 1mA
( Note 2 )
Emitter-collector Breakdown (BV
ECO)
6
V
I
E = 100A
Collector-emitter Dark Current (I
CEO)
100
nA
V
CE = 20V
Coupled
Current Transfer Ratio (CTR) (Note 2)
ISP817, ISP827, ISP847
50
600
%
5mA I
F , 5V VCE
ISP817GB, ISP827GB, ISP847GB
100
600
%
5mA I
F , 5V VCE
ISP817BL, ISP827BL, ISP847BL
200
600
%
5mA I
F , 5V VCE
Collector-emitter Saturation VoltageV
CE (SAT)
0.2
V
20mA I
F , 1mA IC
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x1010
V
IO = 500V (note 1)
Output Rise Time
tr
4
18
s
V
CE = 2V ,
Output Fall Time
tf
3
18
s
I
C = 2mA, RL = 100
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
18/10/99
ELECTRICAL CHARACTERISTICS ( T
A = 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs)
260°C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
35V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
DB92275M-AAS/A1
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