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| 型号： | ITT2303GJ |
| 元件分类： | 放大器 |
| 英文描述： | 2200 MHz - 2600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | PLASTIC, FULL DOWNSET MSOP-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 61K |
| 代理商： | ITT2303GJ |
RF Power Amplifier IC for 2.4 GHz ISM
ITT2303GJ
902536 G
, November 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel:
1-540-563-3949
1-888-563-3949 (USA)
Fax: 1-540-563-8616
1
FEATURES
Perfect for 802.11B, HOP, SWAP, HOMERF,
Bluetooth, WDECT, MDS, MMDS
Single Positive Supply
Power Added Efficiency as high as 55%
IP3 = +43 dBm
Output Power 26.5 dBm @ 3.3V
Output Power 28.5 dBm @ 5.5V.
100% Duty Cycle
2200 to 2600 MHz Operation
8 Pin MSOP Full Downset Plastic Package
Operates Over Wide Ranges of Supply Voltage
Self-Aligned MSAG
-Lite MESFET Process
Package bottom is electrical and thermal ground
Description
Maximum Ratings (T
S = 37 °C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
VDD
5.5
V
RF Input Power
PIN
10
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-40 to
+150
°C
The ITT2303GJ is an RF power amplifier based
on GaAsTEK’s Self-Aligned MSAG
MESFET
Process. This product is designed for use in
2.4 GHz ISM products. For booster applications, it
features a low power “bypass” mode and output
power control via VDD1.
Electrical Characteristics V
DD= 3.3 V, PIN= -2 dBm, Duty Cycle = 100 %, TS = 37 °C (Note 1), Output externally matched to 50
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
2400
2500
MHz
Output Power, f = 2450 MHz
POUT
25.3
26.5
27.7
dBm
Power Added Efficiency, f = 2450 MHz
η
43
51
%
Current, f = 2450 MHz
Idd
265
415
mA
Harmonics, f = 2450 MHz
2, 3, 4
—
-30
dBc
Input VSWR, f = 2450 MHz
—
2.0:1
—
Off Isolation (VDD=0 V)
—40
dB
Thermal Resistance, Junction to Case
RTH
25
°C/W
Third Order Intercept Point
(f1=2450 MHz, f2 = 2451 MHz, PIN = -20 dBm SCL)
IP3
43
dBm
Load Mismatch (VDD = 5.5 V, VSWR = 8:1, PIN = 0 dBm)
—
No Degradation in Power Output
Stability (PIN = -2 to 2 dBm, VDD = 0-5.5 V, Load VSWR = 5:1, fixed phases)
—
All non-harmonically related outputs more than
60 dB below desired signal
Note 1:
TS is the temperature measured at the soldering point of the downset paddle on the bottom of the IC, mounted on 60 mil GETEK evaluation
board in a free air condition with ambient room temperature TA=25 °C. The electrical data presented herein was taken with the evaluation
board shown in Figure 8, under room temperature conditions and CW operation, unless otherwise specified.
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