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参数资料
| 型号： | IX2R11M6 |
| 厂商： | IXYS |
| 文件页数： | 1/13页 |
| 文件大小： | 0K |
| 描述： | IC DRVR HALF BRIDGE 2A 16-MLP |
| 标准包装： | 3,000 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-MLP |
| 供应商设备封装： | 16-MLP |
| 包装： | 带卷 (TR) |
IX2R11
IX2R11
500 Volt, 2 Ampere High & Low-side Driver
for N-Channel MOSFETs and IGBTs
Features
? Floating High Side Driver with boot-strap power
supply along with a Low Side Driver.
? Fully operational to 500V
? ± 50V/ns dV/dt immunity
? Gate drive power supply range: 10 - 35V
? Undervoltage lockout for both output drivers
? Separate logic power supply range: 3.3V to V CL
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes
? Latch-Up protected over entire
operating range
? Matched propagation delay for both outputs
? High peak output current: 2A
? Low output impedance
? Low power supply current
? Immune to negative voltage transients
General Description
The IX2R11 High Side and Low Side Driver is for driving N-
channel MOSFETs and IGBTs with high side and low side
outputs, whose input signals reference the low side. The High
Side driver can control a MOSFET or IGBT connected to a
positive bus voltage up to 500V. The logic input stages are
compatible with TTL or CMOS, have built-in hysteresis and are
fully immune to latch up over the entire operating range. The
IX2R11 can withstand dV/dt on the output side up to ± 50V/ns.
The IX2R11 comes in either the 16-PIN SOIC package
(IX2R11S3) or the 14-PIN DIP through-hole package
(IX2R11P7).
Ordering Information
Part Number Package Type
IX2R11P7
14-PIN DIP
Applications
?
Driving MOSFETs and IGBTs in half-bridge circuits
?
High voltage, high side and low side drivers
IX2R11S3
16-PIN SOIC
?
?
?
?
Motor Controls
Switch Mode Power Supplies (SMPS)
DC to DC Converters
Class D Switching Amplifiers
Warning: The IX2R11 is ESD sensitive.
Precaution: When performing the High-Voltage
tests, adequate safety precautions should be taken.
* Operational voltage rating of 500V determined in a typical half-bridge circuit configuration (refer to Figure 10 and Figure 11).
Operational voltage in other circuit configurations may vary
Figure 1. Typical Circuit Connection
Up to 500V
? 2007 IXYS CORPORATION All rights reserved
1
First Release
DS99165C(10/07)
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| IX2R11M6T/R | 功能描述:功率驱动器IC 2 Amps 35V 7.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IX2R11P7 | 功能描述:IC DRVR HALF BRIDGE 2A 14-PDIP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| IX2R11S3 | 功能描述:IC DRVR HALF BRIDGE 2A 16-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
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| IX-30-0001 | 功能描述:脉冲变压器 IX5 Pulse transform THT 1A RoHS:否 制造商:Murata Power Solutions 安装风格:SMD/SMT 匝数比:1:1:1 电感:1890 uH 次级线圈电阻: 电压时间 - Et: 长度:12.7 mm 宽度:9.52 mm 高度:6.35 mm |
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