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参数资料
| 型号： | IXBD4410SI |
| 厂商： | IXYS |
| 文件页数： | 7/11页 |
| 文件大小： | 0K |
| 描述： | IC LOW SIDE DRIVER 16SOIC |
| 产品变化通告： | Discontinuation Notice 15/Jun/2010 |
| 标准包装： | 46 |
| 系列： | ISOSMART™ |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 110ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 1 |
| 高端电压 - 最大（自引导启动）： | 1200V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
IXBD4410
IXBD4411
Application
The IXBD4410/4411 chipset devices
are specifically designed as MOS-
gated transistor drivers in half-bridge
power converters, 1- and 3-phase
motor controls, and UPS applications.
The phase-leg PWM command is
normally generated by previous (user
provided) circuitry. It must be
decomposed into two separate logic
signals, one for the high-side and one
for the low-side power transistors, with
appropriate deadtime for each state
transition. The deadtime insures non-
overlapping conduction even if the
turn-on and turn-off delay times of the
power devices are unequal. The
minimum deadtime should be greater
than t dlh . A separate circuit, or an IC
device like the IXYS deadtime
reduces the voltage required to create
a failure, this problem is even more
likely to occur. In an industrial module
package (e.g.: a 150 A/1200 V IGBT
phase-leg module), the series induc-
tance contributed by the long gate
leads and connectors further compli-
cate the design.
In a heavily snubbered converter, or in
a power supply design with low
transformer leakage inductance, the
design problem is relatively simple and
negative drive is seldom required.
However, in a modern snubberless or
lightly snubbered converter design, it is
important to keep the gate drive
impedance high enough during
transistor turnoff to limit the reapplied
dv/dt (the transistor is its own 'active'
snubber). This is always important for
EMI control, and in the case of IGBT
generator IXDP630, can be used to
perform this function. The
ISOSMART? chipset family of
devices do not generate deadtime,
although there is an internal lockout
that prohibits one device form being
commanded "on" before the other is
commanded "off". This simplifies start-
up and shutdown protection circuitry,
preventing logic error during power-up
from turning on both high-and low-side
transistors simultaneously.
Negative V EE Charge Pump Circuit
Design
The on-chip V EE generator provided in
the IXBD4410/4411 generates a nega-
tive power supply, regulated at 20 V
below the positive V DD rail. If V DD is +10
V, V EE will be -10 V. If V DD is +15 V, V EE
will be -5 V. This negative drive
potential in the off-state is either
desirable or required in many in-
stances. When switching a clamped
inductive load (Fig. 5), the turn-on of
Q2 will commutate the freewheeling
diode around Q1. Whether this diode is
intrinsic (as in a MOSFET) or extrinsic
(IGBT or bipolar), its reverse recovery
is critical to proper circuit operation.
At high turn-on di/dt in Q2 and near its
rated voltage, the recovery of D1 can
get quite "snappy" (the di/dt in the
second half of the recovery process,
after the diode has begun to recover its
blocking capability, can get very large),
creating a very high dv/dt across Q1.
This dv/dt is impressed across the
Miller capacitance of Q1, forcing a
Fig. 5: Switching a clamped inductive
load
terminal of the device. If this current
pulse causes a high enough voltage
drop across the output impedance of
the gate drive circuit, R out , Q1 will be
turned on.
The Q1 conduction in every instance
Q2 is turned on (and vice versa), aside
from degrading efficiency, can lead to
catastrophic failure of both power
transistors. At high temperature, where
the -6 to -7 mV/ ° C temperature
coefficient of IGBT/MOSFET threshold
may be required to achieve the
necessary RBSOA. At the same time, it
is mandatory to keep the off-state gate
drive impedance very low to assure the
transistor remain off during induced
dv/dt (including diode recovery dv/dt).
In some instances, it is simply not
possible to satisfy both criteria with 0 V
applied in the off-state. In these cases
the IXBD4410/4411 with V EE negative
bias generator must be used.
The internal V EE generator is a charge
pump circuit. Referring to Fig. 6, an
external charge pump capacitor is
required between the CA and CB
1N5817
1N5817
large current to flow out the gate
? 2004 IXYS All rights reserved
Fig. 6: IXBD4410/4411 Detailed one phase circuit with dead time generator IXDP 630
7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXBD4411 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:ISOSMART Half Bridge Driver Chipset |
| IXBD4411PC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Interface IC |
| IXBD4411PI | 功能描述:功率驱动器IC 1/2Bridge2A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXBD4411SI | 功能描述:功率驱动器IC 1/2Bridge2A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXBD4412PC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Interface IC |
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