参数资料
型号: IXDD604D2TR
厂商: IXYS Integrated Circuits Division
文件页数: 3/13页
文件大小: 0K
描述: IC GATE DVR 4A DUAL HS 8DFN
标准包装: 2,000
配置: 低端
输入类型: 非反相
延迟时间: 29ns
电流 - 峰: 4A
配置数: 2
输出数: 2
电源电压: 4.5 V ~ 35 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-EP(5x4)
包装: 带卷 (TR)
I NTEGRATED C IRCUITS D IVISION
1 Specifications
IXD_604
1.1 Pin Configurations
IXDD604PI/SI/SIA
IXDD604D2
1.2 Pin Definitions
E N A
1
8
E N B
E N A
1
8
OUTA
Pin Name
Description
I N A
G N D
I N B
2
3
4
A
B
7
6
5
OUTA
V CC
OUTB
I N A
I N B
E N B
2
3
4
A
B
7
6
5
G N D
V CC
OUTB
INA
INB
Channel A Logic Input
Channel B Logic Input
Channel A Enable Input -
ENA
Drive pin low to disable Channel A and force
IXDI604PI/SI/SIA
IXDF604PI/SI/SIA
Channel A Output to a high impedance state
N C
1
8
N C
N C
1
8
N C
Channel B Enable Input -
I N A
2
A
7
OUTA
I N A
2
A
7
OUTA
ENB
Drive pin low to disable Channel A and force
G N D
3
6
V CC
G N D
3
6
V CC
Channel A Output to a high impedance state
I N B
4
B
5
OUTB
I N B
4
B
5
OUTB
OUTA
Channel A Output - Sources or sinks current to
OUTA
turn-on or turn-off a discrete MOSFET or IGBT
IXDN604PI/SI/SIA
OUTB
Channel B Output - Sources or sinks current to
N C
1
8
N C
OUTB
turn-on or turn-off a discrete MOSFET or IGBT
I N A
G N D
I N B
2
3
4
A
B
7
6
5
OUTA
V CC
OUTB
V CC
GND
Supply Voltage - Provides power to the device
Ground - Common ground reference for the
device
1.3 Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Current
Junction Temperature
Storage Temperature
Symbol
V CC
V INx , V ENx
I OUT
T J
T STG
Minimum
-0.3
-5
-
-55
-65
Maximum
40
V CC +0.3
±4
+150
+150
Units
V
V
A
°C
°C
Absolute maximum electrical ratings are at 25°C
Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device.
Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not
implied.
1.4 Recommended Operating Conditions
Parameter
Supply Voltage
Operating Temperature Range
R05
Symbol
V CC
T A
www.ixysic.com
Range
4.5 to 35
-40 to +125
Units
V
°C
3
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IXDD604PI 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDD604SI 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDD604SIA 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDD604SIATR 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDD604SITR 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube