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| 型号： | IXDD630MCI |
| 厂商： | IXYS Integrated Circuits Division |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER LOW SIDE 5TO220 |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 46ns |
| 电流 - 峰： | 30A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 9 V ~ 35 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-5 |
| 供应商设备封装： | TO-220-5 |
| 包装： | 管件 |
IXD_630
30-Ampere Low-Side
I NTEGRATED C IRCUITS D IVISION
Features
? 30A Peak Source/Sink Drive Current
? High Operating Voltage Capability: 35V
? -40°C to +125°C Extended Operating Temperature
Range
? Under-Voltage Lockout Protection
? Logic Input Withstands Negative Swing of up to 5V
? Fast Rise and Fall Times: < 20ns
? Low Propagation Delay Time
? Low 10 ? A Supply Current
? Low Output Impedance
Applications
Ultrafast MOSFET Drivers
Description
The IXDD630/IXDI630/IXDN630 high-speed gate
drivers are especially well suited for driving the latest
IXYS power MOSFETs and IGBTs. The IXD_630
output can source and sink 30A of peak current while
producing voltage rise and fall times of less than 20ns.
Internal circuitry eliminates cross conduction and
current "shoot-through," and the driver is virtually
immune to latch up. Under-voltage lockout (UVLO)
circuitry holds the output LOW until sufficient supply
voltage is applied (12.5V for the IXD_630 versions,
and 9V for the IXD_630M versions). Low propagation
delays and fast, matched rise and fall times make the
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Efficient Power MOSFET and IGBT Switching
Switch Mode Power Supplies
Motor Controls
DC to DC Converters
Class-D Switching Amplifiers
Pulse Transformer Driver
IXD_630 family ideal for very high frequency and
high-power applications.
The IXDD630 is configured as a non-inverting driver
with an enable. The IXDN630 is configured as a
non-inverting driver, and the IXDI630 is configured as
an inverting driver.
Pb
e 3
The IXD_630 family is available in a 5-pin TO-220 (CI),
and a 5-pin TO-263 (YI) package.
Ordering Information
Part Number
IXDD630CI
Logic
Configuration
UVLO
12.5V
Package Type
5-Pin TO-220
Packing
Method
Tube
Quantity
50
IXDD630MCI
IXDD630YI
IXDD630MYI
IXDI630CI
IXDI630MCI
IXDI630YI
IXDI630MYI
IXDN630CI
IXDN630MCI
IXDN630YI
IXDN630MYI
I N
E N
I N
I N
OUT
OUT
OUT
9V
12.5V
9V
12.5V
9V
12.5V
9V
12.5V
9V
12.5V
9V
5-Pin TO-220
5-Pin TO-263
5-Pin TO-263
5-Pin TO-220
5-Pin TO-220
5-Pin TO-263
5-Pin TO-263
5-Pin TO-220
5-Pin TO-220
5-Pin TO-263
5-Pin TO-263
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
50
50
50
50
50
50
50
50
50
50
50
DS-IXD_630-R03
www.ixysic.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDD630MYI | 功能描述:功率驱动器IC 9V 5-PIN TO-263 MOSFET DRIVER; 30A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDD630YI | 功能描述:功率驱动器IC 12.5V 5-PIN TO-263 MOSFET DRIVER; 30A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE504D2 | 功能描述:功率驱动器IC 4 Amps 35V 2.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE504D2R | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown |
| IXDE504D2T | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown |
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