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参数资料
| 型号： | IXDE514PI |
| 厂商： | IXYS |
| 文件页数： | 4/13页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER 14A 8-DIP |
| 产品变化通告： | Discontinuation Notice 15/Jun/2010 |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 20ns |
| 电流 - 峰： | 14A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 30 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
IXDD514 / IXDE514
Electrical Characteristics @ temperatures over -55 o C to 125 o C (3)
Unless otherwise noted, 4.5V ≤ V CC ≤ 30V , Tj < 150 o C
All voltage measurements with respect to GND. IXD_502 configured as described in Test Conditions . All specifications are for one channel.
Symbol
Parameter
Test Conditions
Min
Typ (4)
Max
Units
V IH
V IL
High input voltage
Low input voltage
4.5V ≤ V CC ≤ 18V
4.5V ≤ V CC ≤ 18V
2.7
0.8
V
V
V IN
Input voltage range
-5
V CC + 0.3
V
I IN
Input current
0V ≤ V IN ≤ V CC
-10
10
μ A
V OH
V OL
High output voltage
Low output voltage
V CC - 0.025
0.025
V
V
R OH
Output resistance
V CC = 18V
1.25
?
@ Output high
R OL
Output resistance
V CC = 18V
1.25
?
@ Output Low
I DC
Continuous output
1
A
current
t R
t F
t ONDLY
Rise time
Fall time
On-time propagation
C L =15 nF Vcc=18V
C L =15 nF Vcc=18V
C L =15 nF Vcc=18V
23
30
20
100
100
60
ns
ns
ns
delay
t OFFDLY
Off-time propagation
C L =15 nF Vcc=18V
40
60
ns
delay
V CC
I CC
Power supply voltage
Power supply current
V IN = 3.5V
V IN = 0V
4.5
18
1
0
30
3
10
V
mA
μ A
V IN = + V CC
10
μ A
Notes:
1. Operating the device beyond the parameters listed as “Absolute Maximum Ratings” may cause permanent
damage to the device. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
2. The device is not intended to be operated outside of the Operating Ratings.
3. Electrical Characteristics provided are associated with the stated Test Conditions.
4. Typical values are presented in order to communicate how the device is expected to perform, but not necessarily
to highlight any specific performance limits within which the device is guaranteed to function.
Copyright ? 2006 IXYS CORPORATION All rights reserved
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDE514SIA | 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE514SIAT/R | 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDF402PI | 功能描述:功率驱动器IC 2 Amps 40V 3 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDF402SI | 功能描述:功率驱动器IC 40V 2A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDF402SI-16 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:2 Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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