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| 型号： | IXDE514SIAT/R |
| 厂商： | IXYS |
| 文件页数： | 12/13页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER 14A 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 20ns |
| 电流 - 峰： | 14A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 30 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
IXDD514 / IXDE514
Supply Bypassing and Grounding Practices, Output Lead inductance
When designing a circuit to drive a high speed MOSFET utilizing the IXDD514/IXDE514, it is very important to keep certain design criteria
in mind, in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing , Grounding , and
minimizing the Output Lead Inductance .
Say, for example, we are using the IXDD514 to charge a 5000pF capacitive load from 0 to 25 volts in 25ns…
Using the formula: I= ? V C / ? t, where ? V=25V C=5000pF & ? t=25ns we can determine that to charge 5000pF to 25 volts in 25ns will
take a constant current of 5A. (In reality, the charging current won’t be constant, and will peak somewhere around 8A).
SUPPLY BYPASSING
In order for our design to turn the load on properly, the IXDD514 must be able to draw this 5A of current from the power supply in the
25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of
achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the
load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary
impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-
pulse current-service capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the
lengths of the leads between these bypass capacitors and the IXDD514 to an absolute minimum.
GROUNDING
In order for the design to turn the load off properly, the IXDD514 must be able to drain this 5A of current into an adequate grounding system.
There are three paths for returning current that need to be considered: Path #1 is between the IXDD514 and it’s load. Path #2 is between
the IXDD514 and it’s power supply. Path #3 is between the IXDD514 and whatever logic is driving it. All three of these paths should be
as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these
three ground paths distinctly separate. Otherwise, (for instance), the returning ground current from the load may develop a voltage that
would have a detrimental effect on the logic line driving the IXDD514.
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made
to keep the leads between the driver and it’s load as short and wide as possible. If the driver must be placed farther than 2” from the
load, then the output leads should be treated as transmission lines. In this case, a twisted-pair should be considered, and the return
line of each twisted pair should be placed as close as possible to the ground pin of the driver, and connect directly to the ground terminal
of the load.
Copyright ? 2006 IXYS CORPORATION All rights reserved
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDF402PI | 功能描述:功率驱动器IC 2 Amps 40V 3 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDF402SI | 功能描述:功率驱动器IC 40V 2A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDF402SI-16 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:2 Ampere Dual Low-Side Ultrafast MOSFET Drivers |
| IXDF402SIA | 功能描述:功率驱动器IC 2 Amps 40V 3 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDF402SIA-16 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:2 Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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