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参数资料
| 型号： | IXDI514D1T/R |
| 厂商： | IXYS |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER SGL 14A 6-DFN |
| 标准包装： | 1,000 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 30ns |
| 电流 - 峰： | 14A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 30 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-VFDFN |
| 供应商设备封装： | 6-DFN |
| 包装： | 带卷 (TR) |
IXDI514 / IXDN514
* The following notes are meant to define the conditions for the θ J-A , θ J-C and θ J-S values:
1) The θ J-A (typ) is defined as junction to ambient. The θ J-A of the standard single die 8-Lead PDIP and 8-Lead SOIC are dominated by the
resistance of the package, and the IXD_5XX are typical. The values for these packages are natural convection values with vertical boards
and the values would be lower with natural convection. For the 6-Lead DFN package, the θ J-A value supposes the DFN package is soldered
on a PCB. The θ J-A (typ) is 200 ° C/W with no special provisions on the PCB, but because the center pad provides a low thermal resistance
to the die, it is easy to reduce the θ J-A by adding connected copper pads or traces on the PCB. These can reduce the θ J-A (typ) to 125 ° C/W
easily, and potentially even lower. The θ J-A for DFN on PCB without heatsink or thermal management will vary significantly with size,
construction, layout, materials, etc. This typical range tells the user what he is likely to get if he does no thermal management.
2) θ J-C (max) is defined as juction to case, where case is the large pad on the back of the DFN package. The θ J-C values are generally not
published for the PDIP and SOIC packages. The θ J-C for the DFN packages are important to show the low thermal resistance from junction to
the die attach pad on the back of the DFN, -- and a guardband has been added to be safe.
3) The θ J-S (typ) is defined as junction to heatsink, where the DFN package is soldered to a thermal substrate that is mounted on a heatsink.
The value must be typical because there are a variety of thermal substrates. This value was calculated based on easily available IMS in the
U.S. or Europe, and not a premium Japanese IMS. A 4 mil dialectric with a thermal conductivity of 2.2W/mC was assumed. The result was
given as typical, and indicates what a user would expect on a typical IMS substrate, and shows the potential low thermal resistance for the
DFN package.
Pin Description
SYMBOL
VCC
IN
OUT
GND
FUNCTION
Supply Voltage
Input
Output
Ground
DESCRIPTION
Positive power-supply voltage input. This pin provides power to the
entire chip. The range for this voltage is from 4.5V to 30V.
Input signal-TTL or CMOS compatible.
Driver Output. For application purposes, this pin is connected,
through a resistor, to Gate of a MOSFET/IGBT.
The system ground pin. Internally connected to all circuitry, this pin
provides ground reference for the entire chip. This pin should be
connected to a low noise analog ground plane for optimum
performance.
CAUTION: Follow proper ESD procedures when handling and assembling this component.
Figure 3 - Characteristics Test Diagram
5.0V
Vcc
15nF
0V
10uF
25V
5
2500 pf
0V
IXDI514
Vcc
0V
IXDN514
Agilent 1147A
Current Probe
相关PDF资料 |
PDF描述 |
|---|---|
| AISM-1812-390K-T | INDUCTOR CHIP 39UH 150MA SMD |
| 395-072-540-202 | CARD EDGE 72POS DL .100X.200 BLK |
| T95D477M6R3EZSL | CAP TANT 470UF 6.3V 20% 2917 |
| IXDI514D1 | IC GATE DRIVER SGL 14A 6-DFN |
| 395-072-540-201 | CARD EDGE 72POS DL .100X.200 BLK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDI514PI | 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDI514SIA | 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDI514SIAT/R | 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDI514SIATR | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:14 Ampere Low-Side Ultrafast MOSFET Drivers |
| IXDI602D2TR | 功能描述:2A 8 DFN DUAL INVERTING RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
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