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参数资料
| 型号： | IXDN409PI |
| 厂商： | IXYS |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR 9A LOSIDE 8-DIP |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 36ns |
| 电流 - 峰： | 9A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 35 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
| 配用： | EVDN409-ND - BOARD EVALUATION IXDN409 |
IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI
IXDN409PI / 409SI / 409YI / 409CI
Pin Configurations
1 VCC
2 IN
3 EN *
4 GND
VCC 8
OUT 7
OUT 6
GND 5
8 PIN DIP (PI)
SO8 (SI)
1
2
3
4
5
Vcc
OUT
GND
IN
EN *
TO220 (CI)
TO263 (YI)
Pin Description
SYMBOL
VCC
IN
EN *
OUT
GND
FUNCTION
Supply Voltage
Input
Enable
Output
Ground
DESCRIPTION
Positive power-supply voltage input. This pin provides power to the
entire chip. The range for this voltage is from 4.5V to 35V.
Input signal-TTL or CMOS compatible.
The system enable pin. This pin, when driven low, disables the chip,
forcing high impedance state to the output (IXDD409 Only).
Driver Output. For application purposes, this pin is connected,
through a resistor, to Gate of a MOSFET/IGBT.
The system ground pin. Internally connected to all circuitry, this pin
provides ground reference for the entire chip. This pin should be
connected to a low noise analog ground plane for optimum
performance.
* This pin is used only on the IXDD409, and is N/C on the IXDI409 and IXDN409.
Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures
when handling and assembling this component.
Figure 2 - Characteristics Test Diagram
V IN
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDN409SI | 功能描述:功率驱动器IC 9 Amps 40V 1.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN409SIA | 功能描述:功率驱动器IC 9.0 Amps 40 V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN409YI | 功能描述:功率驱动器IC 9 Amps 40V 1.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN414CI | 功能描述:功率驱动器IC 14 Amps 40V 1 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN414CM | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:14 Ampere Low-Side Ultrafast MOSFET Drivers |
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