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参数资料
| 型号： | IXDN414PI |
| 厂商： | IXYS |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSF/IGBT 14A 8-DIP |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 30ns |
| 电流 - 峰： | 14A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 35 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
| 配用： | EVDN414-ND - BOARD EVALUATION IXDN414 |
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
Absolute Maximum Ratings (Note 1)
Operating Ratings
Parameter
Supply Voltage
All Other Pins
Power Dissipation
T CASE ≤ 25oC: TO220 (CI), TO263 (YI)*
Power Dissipation, T AMBIENT ≤ 25oC
8 Pin PDIP (PI), 14 Pin SOIC
TO220 (CI) TO263 (YI)
Storage Temperature
Soldering Lead Temperature (10s)
Tab Temperature (10s)
Value
40V
-0.3V to
VCC + 0.3V
12.5W
833mW
2W
-55oC to 150oC
300oC
260oC
Parameter
Maximum Junction Temperature
Operating Temperature Range
Thermal Resistance (Junction To Case)
TO220 (CI)
TO263 (YI), 14 Pin SOIC (SI)
Thermal Resistance (Junction to Ambient)
8-Pin PDIP (PI)
14-Pin SOIC
TO-220 (CI), TO-263 (YI)
* Subject to internal lead current limit I DC
Value
150oC
-55oC to 125oC
10 K/W
150 K/W
120 K/W
62.5 K/W
Electrical Characteristics
Unless otherwise noted, T A = 25 o C, 4.5V ≤ V CC ≤ 35V .
All voltage measurements with respect to GND. Device configured as described in Test Conditions .
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V IH
V IL
High input voltage
Low input voltage
4.5V ≤ V CC ≤ 18V
4.5V ≤ V CC ≤ 18V
3.5
0.8
V
V
V IN
Input voltage range
-5
V CC + 0.3
V
I IN
Input current
0V ≤ V IN ≤ V CC
-10
10
μ A
V OH
V OL
High output voltage
Low output voltage
V CC - 0.025
0.025
V
V
R OH
Output resistance
I OUT = 10mA, V CC = 18V
600
1000
m ?
@ Output high
R OL
Output resistance
I OUT = 10mA, V CC = 18V
600
1000
m ?
@ Output Low
I PEAK
I DC
Peak output current
Continuous output
current
V CC is 18V
8 Pin Dip (PI) (Limited by pkg power dissipation)
TO220 (CI), TO263 (YI)
14
3
4
A
A
A
t R
Rise time
(1)
C L =15nF Vcc=18V
22
27
ns
t F
Fall time
(1)
C L =15nF Vcc=18V
20
25
ns
delay
delay
t ONDLY
t OFFDLY
V CC
I CC
On-time propagation
(1)
Off-time propagation
(1)
Power supply voltage
Power supply current
C L =15nF Vcc=18V
C L =15nF Vcc=18V
V IN = 3.5V
V IN = 0V
V IN = + V CC
4.5
30
31
18
1
0
33
34
35
3
10
10
ns
ns
V
mA
μ A
μ A
(1)
See Figures 3a and 3b
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device.
Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The
guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may
affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling
and assembling this component.
Specifications subject to change without notice
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDN414SI | 功能描述:功率驱动器IC 40V 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN414YI | 功能描述:功率驱动器IC 14 Amps 40V 1 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN414YM | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:14 Ampere Low-Side Ultrafast MOSFET Drivers |
| IXDN430 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:30 Amp Low-Side Ultrafast MOSFET / IGBT Driver |
| IXDN430CI | 功能描述:功率驱动器IC 30 Amps 40V 0.4 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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