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参数资料
| 型号： | IXDN414SI |
| 厂商： | IXYS |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSF/IGBT 14A14SOIC |
| 标准包装： | 94 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 30ns |
| 电流 - 峰： | 14A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 35 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOIC |
| 包装： | 管件 |
| 配用： | EVDN414-ND - BOARD EVALUATION IXDN414 |
| 其它名称： | Q2799453 |
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
14 Ampere Low-Side Ultrafast MOSFET and IGBTDrivers
Features
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes
? Latch-Up Protected Over Entire
Operating Range
? High Peak Output Current: 14A Peak
? Wide Operating Range: 4.5V to 35V
? -55 o C to 125 o C Extended Operating Temperature
Standard
? High Capacitive Load
Drive Capability: 15nF in <30ns
? Matched Rise And Fall Times
? Low Propagation Delay Time
? Low Output Impedance
? Low Supply Current
Applications
? Driving MOSFETs and IGBTs
? Motor Controls
? Line Drivers
General Description
The IXDI414/IXDN414 are high speed high current gate drivers
specifically designed to drive the largest MOSFETs and IGBTs
to their minimum switching time and maximum practical
frequency limits. The IXDI/N414 can source and sink 14A of
peak current, while producing voltage rise and fall times of less
than 30ns, to drive the latest IXYS MOSFETs & IGBTs. The
input of the driver is compatible with TTL or CMOS and is fully
immune to latch up over the entire operating range. Designed
with small internal delays, a patent-pending circuit virtually
eliminates transistor cross conduction and current shoot-
through. Improved speed and drive capabilities are further
enhanced by very low, matched rise and fall times.
The IXDN414 is configured as a non-inverting gate driver and
the IXDI414 is an inverting gate driver.
The IXDN414/IXDI414 family are available in standard 8 pin
P-DIP (PI), 5-pin TO-220 (CI), TO-263 (YI) and thermally
enhanced 14-pin SOIC (SI) surface-mount packages.
?
?
?
?
Pulse Generators
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
Figure 1 - IXDN414 14A Non-Inverting Gate Driver Functional Block Diagram
Vcc
ANTI-CROSS
P
Vcc
IN
CONDUCTION
OUT
GND
* Patent Pending
Copyright ? IXYS CORPORATION 2004
CIRCUIT *
First Release
N
GND
DS99020B(08/04)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDN414YI | 功能描述:功率驱动器IC 14 Amps 40V 1 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN414YM | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:14 Ampere Low-Side Ultrafast MOSFET Drivers |
| IXDN430 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:30 Amp Low-Side Ultrafast MOSFET / IGBT Driver |
| IXDN430CI | 功能描述:功率驱动器IC 30 Amps 40V 0.4 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN430MCI | 功能描述:功率驱动器IC 30 Amps 40V 0.4 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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