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| 型号： | IXDN630YI |
| 厂商： | IXYS Integrated Circuits Division |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER LOW SIDE 5TO263 |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 46ns |
| 电流 - 峰： | 30A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 12.5 V ~ 30 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-6，D²Pak（5 引线+接片），TO-263BA |
| 供应商设备封装： | TO-263-5 |
| 包装： | 管件 |
| 其它名称： | CLA373 |
IXD_630
30-Ampere Low-Side
I NTEGRATED C IRCUITS D IVISION
Features
? 30A Peak Source/Sink Drive Current
? High Operating Voltage Capability: 35V
? -40°C to +125°C Extended Operating Temperature
Range
? Under-Voltage Lockout Protection
? Logic Input Withstands Negative Swing of up to 5V
? Fast Rise and Fall Times: < 20ns
? Low Propagation Delay Time
? Low 10 ? A Supply Current
? Low Output Impedance
Applications
Ultrafast MOSFET Drivers
Description
The IXDD630/IXDI630/IXDN630 high-speed gate
drivers are especially well suited for driving the latest
IXYS power MOSFETs and IGBTs. The IXD_630
output can source and sink 30A of peak current while
producing voltage rise and fall times of less than 20ns.
Internal circuitry eliminates cross conduction and
current "shoot-through," and the driver is virtually
immune to latch up. Under-voltage lockout (UVLO)
circuitry holds the output LOW until sufficient supply
voltage is applied (12.5V for the IXD_630 versions,
and 9V for the IXD_630M versions). Low propagation
delays and fast, matched rise and fall times make the
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Efficient Power MOSFET and IGBT Switching
Switch Mode Power Supplies
Motor Controls
DC to DC Converters
Class-D Switching Amplifiers
Pulse Transformer Driver
IXD_630 family ideal for very high frequency and
high-power applications.
The IXDD630 is configured as a non-inverting driver
with an enable. The IXDN630 is configured as a
non-inverting driver, and the IXDI630 is configured as
an inverting driver.
Pb
e 3
The IXD_630 family is available in a 5-pin TO-220 (CI),
and a 5-pin TO-263 (YI) package.
Ordering Information
Part Number
IXDD630CI
Logic
Configuration
UVLO
12.5V
Package Type
5-Pin TO-220
Packing
Method
Tube
Quantity
50
IXDD630MCI
IXDD630YI
IXDD630MYI
IXDI630CI
IXDI630MCI
IXDI630YI
IXDI630MYI
IXDN630CI
IXDN630MCI
IXDN630YI
IXDN630MYI
I N
E N
I N
I N
OUT
OUT
OUT
9V
12.5V
9V
12.5V
9V
12.5V
9V
12.5V
9V
12.5V
9V
5-Pin TO-220
5-Pin TO-263
5-Pin TO-263
5-Pin TO-220
5-Pin TO-220
5-Pin TO-263
5-Pin TO-263
5-Pin TO-220
5-Pin TO-220
5-Pin TO-263
5-Pin TO-263
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
50
50
50
50
50
50
50
50
50
50
50
DS-IXD_630-R03
www.ixysic.com
1
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相关代理商/技术参数 |
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|---|---|
| IXDN75N120 | 功能描述:IGBT 晶体管 75 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDN75N120A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 120A I(C) | SOT-227B |
| IXDP20N60B | 功能描述:IGBT 晶体管 20 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDP20N60BD1 | 功能描述:IGBT 晶体管 20 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDP35N60B | 功能描述:IGBT 晶体管 35 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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