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参数资料
| 型号： | IXFH6N100 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 1KV 6A TO-247AD |
| 产品目录绘图： | TO-247AD 3-Leads |
| 标准包装： | 30 |
| 系列： | HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 1000V（1kV） |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 2.5mA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2600pF @ 25V |
| 功率 - 最大： | 180W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247AD |
| 包装： | 管件 |
HiPerFET TM
V DSS
I D25
R DS(on)
Power MOSFETs
IXFH/IXFM 6 N90
IXFH/IXFM 6 N100
900 V
1000 V
6A
6A
1.8 W
2.0 W
N-Channel Enhancement Mode
High dv/dt, Low t rr , HDMOS TM Family
t rr ￡ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
6N90
6N100
900
1000
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 20
± 30
6
24
6
18
V
V
A
A
A
mJ
TO-204 AA (IXFM)
(TAB)
dv/dt
P D
T J
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
5
180
-55 ... +150
V/ns
W
° C
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
T JM
150
° C
T stg
-55 ... +150
° C
Features
T L
M d
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10
° C
Nm/lb.in.
? International standard packages
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
Weight
TO-204 = 18 g, TO-247 = 6 g
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
- easy to drive and to protect
? Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
? DC-DC converters
? Synchronous rectification
V DSS
V GS = 0 V, I D = 3 mA
6N90
6N100
900
1000
V
V
? Battery chargers
? Switched-mode and resonant-mode
power supplies
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 2.5 mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2.0
4.5
± 100
250
1
V
nA
m A
mA
? DC choppers
? AC motor control
? Temperature and lighting controls
? Low voltage relays
Advantages
V GS = 10 V, I D = 0.5 ? I D25
R DS(on)
6N90
6N100
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
1.8
2.0
W
W
? Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
91529E(10/95)
1-4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXFH6N100 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-247 |
| IXFH6N100F | 功能描述:MOSFET HiPerRF Power Mosfet 1000V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFH6N100Q | 功能描述:MOSFET 6 Amps 1000V 2 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFH6N120 | 功能描述:MOSFET 6 Amps 1200V 2.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFH6N120P | 功能描述:MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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