参数资料
型号: IXFH94N30T
厂商: IXYS
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 300V 94A TO-247
标准包装: 30
系列: *
Preliminary Technical Information
Trench TM HiperFET TM
Power MOSFETs
IXFT94N30T
IXFH94N30T
V DSS
I D25
R DS(on)
= 300V
= 94A
≤ 36m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-268 (IXFT)
G
S
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
300
V
D (Tab)
V DGR
V GSS
V GSM
I D25
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C
300
± 20
± 30
94
V
V
V
A
TO-247 (IXFH)
I DM
I A
E AS
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
235
47
500
A
A
mJ
G
D
S
D (Tab)
P D
dv/dt
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
890
20
W
V/ns
G = Gate
S = Source
D = Drain
Tab = Drain
T J
-55 to +150
° C
T JM
T stg
+150
-55 to +150
° C
° C
Features
T L
T SOLD
M d
Weight
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-268
TO-247
300
260
1.13/10
4
6
° C
° C
Nm/lb.in.
g
g
International Standard Packages
Avalanche Rated
High Current Handling Capability
Fast Intrinsic Rectifier
Low R DS(on)
Advantages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Easy to Mount
Space Savings
High Power Density
BV DSS
V GS = 0V, I D = 1mA
300
V
V GS(th)
V DS = V GS , I D = 4mA
3.0
5.0
V
Applications
I GSS
I DSS
R DS(on)
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
± 200 nA
50 μ A
2 mA
36 m Ω
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
? 2011 IXYS CORPORATION, All Rights Reserved
DS100383A(11/11)
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