参数资料
型号: IXFK20N80Q
厂商: IXYS
文件页数: 2/2页
文件大小: 0K
描述: MOSFET N-CH 800V 20A TO-264AA
标准包装: 25
系列: HiPerFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 800V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 420 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 4mA
闸电荷(Qg) @ Vgs: 200nC @ 10V
输入电容 (Ciss) @ Vds: 5100pF @ 25V
功率 - 最大: 360W
安装类型: 通孔
封装/外壳: TO-264-3,TO-264AA
供应商设备封装: TO-264AA
包装: 管件
IXFH20N80Q IXFK20N80Q
IXFT20N80Q
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min.
typ.
max.
TO-247 AD (IXFH) Outline
g fs
C iss
V DS = 10 V; I D = 0.5 ? I D25 , pulse test
11
19
5100
S
pF
1
2
3
Terminals:
1 - Gate
C oss
C rss
t d(on)
V GS = 0 V, V DS = 25 V, f = 1 MHz
500
170
28
pF
pF
ns
2 - Drain
3 - Source
Tab - Drain
t r
t d(off)
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1.5 ? (External),
27
74
ns
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
t f
Q g(on)
14
150 200
ns
nC
A
A 1
A 2
b
4.7
2.2
2.2
1.0
5.3
2.54
2.6
1.4
.185
.087
.059
.040
.209
.102
.098
.055
Q gs
Q gd
R thJC
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
34
80
0.35
nC
nC
K/W
b 1
b 2
C
D
E
e
1.65
2.87
.4
20.80
15.75
5.20
2.13
3.12
.8
21.46
16.26
5.72
.065
.113
.016
.819
.610
0.205
.084
.123
.031
.845
.640
0.225
L
19.81
20.32
.780
.800
R thCK
TO-247
TO-264
0.25
0.15
K/W
K/W
L1
? P
Q
3.55
5.89
4.50
3.65
6.40
.140
0.232
.177
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
TO-264 AA Outline
I S
I SM
V SD
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
20
80
1.5
A
A
V
t rr
Q RM
I RM
I F = I S -di/dt = 100 A/ μ s, V R = 100 V
1
9
250
ns
μ C
A
Dim.
A
A1
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
Inches
Min.
Max.
.190 .202
.100 .114
TO-268 Outline
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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