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参数资料
| 型号： | IXFN100N20 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 100A SOT-227B |
| 标准包装： | 10 |
| 系列： | HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 8mA |
| 闸电荷(Qg) @ Vgs： | 380nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9000pF @ 25V |
| 功率 - 最大： | 520W |
| 安装类型： | 底座安装 |
| 封装/外壳： | SOT-227-4，miniBLOC |
| 供应商设备封装： | SOT-227B |
| 包装： | 管件 |
HiPerFET TM
V DSS
I D25
R DS(on)
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t rr
IXFK 90 N 20
IXFN 100 N 20
IXFN 106 N 20
200 V 90 A
200 V 100 A
200 V 106 A
t rr ￡ 200 ns
23 m W
23 m W
20 m W
TO-264 AA
Symbol
Test Conditions
Maximum Ratings
TO-264 AA (IXFK)
IXFK IXFN IXFN
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
Continuous
90N20 100N20 106N20
200 200 200 V
200 200 200 V
± 20 ± 20 20 V
G
D
S
(TAB)
V GSM
I D25
Transient
T C = 25 ° C, Chip capability
± 30
90 ?
± 30
100
20 V
106 A
miniBLOC, SOT-227 B (IXFN)
E153432
S
I D80
I DM
T C = 80 ° C, limited by external leads
T C = 25 ° C, pulse width limited by T JM
76
360
-
400
A
424 A
D
G
I AR
E AR
dv/dt
P D
T C = 25 ° C
T C = 25 ° C
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
50
30
5
500
50
30
5
520
A
30 mJ
5 V/ns
W
G
S
S D
S
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
T J
T JM
-55 ... +150
150
° C
° C
as Main or Kelvin Source
International standard packages
JEDEC TO-264 AA, epoxy meet
T stg
T L
1.6 mm (0.063 in) from case for 10 s
-55 ... +150
300 -
° C
° C
Features
l
q
V ISOL
50/60 Hz, RMS
I ISOL ￡ 1 mA
t = 1 min
t=1s
-
-
2500
3000
V~
V~
q
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
M d
Mounting torque
Terminal connection torque
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
q
q
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Weight
10
30
g
q
Unclamped Inductive Switching (UIS)
rated
q
q
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
q
Synchronous rectification
q
V DSS
V GS = 0 V, I D = 1 mA
200
V
q
Battery chargers
V GH(th)
I GSS
I DSS
V DS = V GS , I D = 8 mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2
4
± 200
400
2
V
nA
m A
mA
q
q
q
q
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ￡ 300 m s,
duty cycle d ￡ 2 %
IXFK90N20
IXFN100N20
IXFN106N20
0.023
0.023
0.020
W
W
W
Advantages
q
q
q
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
92804H (7/97)
1-4
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