参数资料
型号: IXFX60N55Q2
厂商: IXYS
文件页数: 2/5页
文件大小: 0K
描述: MOSFET N-CH 550V 60A PLUS247
标准包装: 30
系列: HiPerFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 550V
电流 - 连续漏极(Id) @ 25° C: 60A
开态Rds(最大)@ Id, Vgs @ 25° C: 88 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 8mA
闸电荷(Qg) @ Vgs: 200nC @ 10V
输入电容 (Ciss) @ Vds: 6900pF @ 25V
功率 - 最大: 735W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: PLUS247?-3
包装: 管件
IXFK 60N55Q2
IXFX 60N55Q2
Symbol
Test Conditions
Characteristic Values
PLUS 247 TM Outline
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
g fs
C iss
C oss
C rss
t d(on)
V DS = 10 V; I D = 0.5 ? I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
30
44
7300
1150
340
22
S
pF
pF
pF
ns
t r
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
14
ns
t d(off)
t f
R G = 1.0 ? (External),
57
9
ns
ns
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Q g(on)
200
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q gs
Q gd
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
42
100
nC
nC
A
A 1
A 2
4.83 5.21
2.29 2.54
1.91 2.16
.190 .205
.090 .100
.075 .085
R thJC
R thCK
TO-264
0.15
0.17
K/W
K/W
b
b 1
b 2
C
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
.045 .055
.075 .084
.115 .123
.024 .031
D
E
e
L
L1
Q
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
Source-Drain Diode
Characteristic Values
R
4.32 4.83
.170 .190
Symbol
I S
Test Conditions
V GS = 0 V
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
60 A
TO-264 AA Outline
I SM
V SD
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
240
1.5
A
V
t rr
Q RM
I RM
I F = 25A, -di/dt = 100 A/ μ s, V R = 100 V
1
10
250
ns
μ C
A
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min.
Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1
6,162,665
6,534,343 6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
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