- 您现在的位置：买卖IC网 > PDF目录176111 > IXGH50N60B4 (IXYS CORP) 100 A, 600 V, N-CHANNEL IGBT, TO-247AD PDF资料下载
参数资料
| 型号： | IXGH50N60B4 |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 221K |
| 代理商： | IXGH50N60B4 |
2011 IXYS CORPORATION, All Rights Reserved
IXGA50N60B4
IXGP50N60B4
IXGH50N60B4
V
CES
= 600V
I
C110
= 36A
V
CE(sat)
≤≤≤≤≤ 1.80V
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25°C to 150°C
600
V
V
CGR
T
J
= 25°C to 150°C, R
GE = 1MΩ
600
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C = 25°C
100
A
I
C110
T
C = 110°C
36
A
I
CM
T
C = 25°C, 1ms
230
A
SSOA
V
GE = 15V, TVJ = 125°C, RG = 10Ω
I
CM = 72
A
(RBSOA)
Clamped Inductive Load
V
CE ≤ VCES
P
C
T
C = 25°C
290
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
Maximum Lead Temperature for Soldering
300
°C
T
SOLD
1.6 mm (0.062in.) from Case for 10s
260
°C
F
C
Mounting Force (TO-263)
10..65 / 2.2..14.6
N/lb.
M
d
Mounting Torque (TO-220 & TO-247)
1.13 / 10
Nm/lb.in.
Weight
TO-263
2.5
g
TO-220
3.0
g
TO-247
6.0
g
DS100319A(04/11)
G = Gate
D
= Collector
S = Emitter
Tab = Collector
TO-247 (IXGH)
G
E
C
C (Tab)
TO-263 AA (IXGA)
G
E
C (Tab)
G
C E
TO-220AB (IXGP)
C (Tab)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified
Min.
Typ.
Max.
BV
CES
I
C
= 250
μA, V
GE = 0V
600
V
V
GE(th)
I
C
= 250
μA, V
CE = VGE
4.0
6.5
V
I
CES
V
CE = VCES, VGE = 0V
25
μA
T
J = 125°C
1 mA
I
GES
V
CE = 0V, VGE = ±20V
±100 nA
V
CE(sat)
I
C
= 36A, V
GE = 15V, Note 1
1.43
1.80
V
T
J = 125°C
1.40
V
High-Gain IGBTs
Low-Vsat PT Trench IGBT
Features
Optimized for Low Conduction and
Switching Losses
International Standard Packages
Square RBSOA
Advantages
Easy to Mount
Space Savings
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Lamp Ballasts
Preliminary Technical Information
相关PDF资料 |
PDF描述 |
|---|---|
| IXGH50N60C4D1 | 90 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| IXGQ50N60C4D1 | 90 A, 600 V, N-CHANNEL IGBT |
| IXSP2N100 | 3 A, 1000 V, N-CHANNEL IGBT, TO-220AB |
| IXXH50N60B3 | 120 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| IXXH75N60C3D1 | 150 A, 600 V, N-CHANNEL IGBT, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXGH50N60BS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247SMD |
| IXGH50N60C2 | 功能描述:IGBT 晶体管 50 Amps 600V 2.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXGH50N60C4 | 功能描述:IGBT 模块 High-Gain IGBTs RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| IXGH50N90B2 | 功能描述:IGBT 晶体管 50 Amps 900V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXGH50N90B2D1 | 功能描述:IGBT 晶体管 50 Amps 900V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。