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参数资料
| 型号： | IXSN50N60BD2 |
| 厂商： | IXYS |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | IGBT 75A 600V SOT-227B |
| 标准包装： | 10 |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.5V @ 15V，50A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 电流 - 集电极截止（最大）： | 350µA |
| Vce 时的输入电容 (Cies)： | 3.85nF @ 25V |
| 功率 - 最大： | 250W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | SOT-227-4，miniBLOC |
| 供应商设备封装： | SOT-227B |
I C25
t fi
HIGH Speed IGBT
with HiPerFRED
Short Circuit SOA Capability
Buck & boost configurations
IXSN 50N60BD2
IXSN 50N60BD3
V CES = 600 V
= 75 A
V CEsat) = 2.5 V
= 150 ns
Preliminary data
...BD2
...BD3
Symbol
Test Conditions
Maximum Ratings
SOT-227B, miniBLOC
V CES
V CGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GE = 1 M W
600
600
V
V
E 153432
2
1
V GES
Continuous
± 20
V
V GEM
I C25
I C90
Transient
T C = 25 ° C
T C = 90 ° C
± 30
75
50
V
A
A
IXSN50N60BD2
3
4
I CM T C = 25 ° C, 1 ms
SSOA V GE = 15 V, T VJ = 125 ° C, R G = 22 W
(RBSOA) Clamped inductive load, L = 30 m H
t SC V GE = 15 V, V CE = 360 V, T J = 125 ° C
(SCSOA) R G = 22 W, non repetitive
200
I CM = 100
@ 0.8 V CES
10
A
A
m s
1 = Emitter; 2 = Gate
3 = Collector; 4 = Diode cathode
IXSN50N60BD3
1 = Emitter/Diode Cathode; 2 = Gate
3 = Collector; 4 = Diode anode
P C
V RRM
T C = 25 ° C
250
600
W
V
I FAVM
I FRM
P D
T J
T JM
T stg
T C = 70 ° C; rectangular, d = 50%
t P z<10 ms; pulse width limited by T J
T C = 25 ° C
60
600
150
-40 ... +150
150
-40 ... +150
A
A
W
° C
° C
° C
Features
? International standard package
miniBLOC
? Aluminium nitride isolation
- high power dissipation
? Isolation voltage 3000 V~
? Very high current, fast switching
M d
Weight
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
IGBT & FRED diode
? MOS Gate turn-on
- drive simplicity
? Low collector-to-case capacitance
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
° C
? Low package inductance (< 10 nH)
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Applications
min. typ.
max.
?
?
AC motor speed control
DC servo and robot drives
BV CES
I C
= 3 mA, V GE = 0 V
600
V
?
DC choppers
V GE(th)
I C
= 4 mA, V CE = V GE
4
8
V
?
Buck converters
I CES
I GES
V CE = 0.8 ? V CES
V GE = 0 V
V CE = 0 V, V GE = ± 20 V
T J = 25 ° C
T J = 125 ° C
350
5
± 100
m A
mA
nA
Advantages
? Easy to mount with 2 screws
? Space savings
V CE(sat)
I C
= I C90 , V GE = 15 V
2.2
2.5
V
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98675 (4/18/2000)
1-5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXSN50N60BD3 | 功能描述:IGBT 晶体管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXSN50N60U1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 53A I(C) | SOT-227B |
| IXSN51N60AU1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 53A I(C) | SOT-227B |
| IXSN52N60AU1 | 功能描述:IGBT 晶体管 80 Amps 600V 3.0 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXSN55N100U1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 61A I(C) | SOT-227B |
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