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| 型号： | IXTA1R6N50D2 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 1.6A D2PAK |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 耗尽模式 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.3 欧姆 @ 800mA，0V |
| 闸电荷(Qg) @ Vgs： | 23.7nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 645pF @ 25V |
| 功率 - 最大： | 100W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-4，D²Pak（3 引线+接片），TO-263AA |
| 供应商设备封装： | TO-263AA |
| 包装： | 管件 |
IXTY1R6N50D2 IXTA1R6N50D2
IXTP1R6N50D2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-252 AA (IXTY) Outline
g fs
C iss
C oss
C rss
V DS = 30V, I D = 0.8A, Note 1
V GS = -10V, V DS = 25V, f = 1MHz
1.00
1.75
645
65
16.5
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = ± 5V, V DS = 250V, I D = 0.8A
R G = 5 Ω (External)
25
70
35
41
ns
ns
ns
ns
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
Q g(on)
23.7
nC
Dim.
Millimeter
Inches
Q gs
Q gd
V GS = 5V, V DS = 250V, I D = 0.8A
2.2
13.8
nC
nC
A
A1
Min. Max.
2.19 2.38
0.89 1.14
Min. Max.
0.086 0.094
0.035 0.045
R thJC
R thCS
TO-220
0.50
1.25 ° C/W
° C/W
A2
b
b1
b2
0
0.64
0.76
5.21
0.13
0.89
1.14
5.46
0
0.025
0.030
0.205
0.005
0.035
0.045
0.215
Safe-Operating-Area Specification
Symbol Test Conditions
Characteristic Values
Min. Typ. Max.
c
c1
D
D1
E
0.46
0.46
5.97
4.32
6.35
0.58
0.58
6.22
5.21
6.73
0.018
0.018
0.235
0.170
0.250
0.023
0.023
0.245
0.205
0.265
SOA
V DS = 400V, I D = 0.15A, T C = 75 ° C, Tp = 5s
60
W
E1
e
4.32 5.21
2.28 BSC
0.170 0.205
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
Source-Drain Diode
L
L1
0.51 1.02
0.64 1.02
0.020
0.025
0.040
0.040
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
V SD I F = 1.6A, V GS = -10V, Note 1
t rr
I F = 1.6A, -di/dt = 100A/ μ s
I RM
V R = 100V, V GS = -10V
Q RM
Characteristic Values
Min. Typ. Max.
0.8 1.3
400
9.16
1.83
V
ns
A
μ C
L2 0.89 1.27 0.035
L3 2.54 2.92 0.100
TO-220 (IXTP) Outline
0.050
0.115
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
b
b2
c
c2
4.06
0.51
1.14
0.40
1.14
4.83
0.99
1.40
0.74
1.40
.160
.020
.045
.016
.045
.190
.039
.055
.029
.055
1.
2.
3.
4.
Gate
Drain
Source
Drain
D
D1
E
E1
e
L
L1
8.64
8.00
9.65
6.22
2.54
14.61
2.29
9.65
8.89
10.41
8.13
BSC
15.88
2.79
.340
.280
.380
.270
.100
.575
.090
.380
.320
.405
.320
BSC
.625
.110
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
L2
L3
1.02
1.27
1.40
1.78
.040
.050
.055
.070
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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相关代理商/技术参数 |
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| IXTA200N055T2 | 功能描述:MOSFET 200 Amps 55V 0.0042 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| IXTA200N075T7 | 功能描述:MOSFET 200 Amps 75V 4.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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